Part Number | 2SB755 |
Manufacturer | INCHANGE |
Title | PNP Transistor |
Description | ·Collector-Emitter Breakdown Voltage- V(BR)CEO= -150V(Min) ·Good Linearity of hFE ·Complement to Type 2SD845 ·Minimum Lot-to-Lot variations for ro... |
Features |
tage
IE= -1mA; IC= 0
VCE(sat) Collector-Emitter Saturation Voltage IC= -5A; IB= -0.5A
VBE(on) Base-Emitter On Voltage
IC= -5A; VCE= -5V
ICBO
Collector Cutoff Current
VCB= -150V; IE= 0
IEBO
Emitter Cutoff Current
VEB= -5V; IC= 0
hFE
DC Cur...
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Published | Sep 17, 2020 |
Datasheet | 2SB755 PDF File |