DatasheetsPDF.com

2SB886

Part Number	2SB886
Manufacturer	INCHANGE
Title	PNP Transistor
Description	·High DC Current Gain- : hFE = 1500(Min)@ IC= -4A ·Wide Area of Safe Operation ·Low Collector-Emitte...
Features	ARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Vol...
Published	Sep 17, 2020
Datasheet	2SB886 PDF File

DigiKey In Stock:

Features

ARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= -50mA, RBE= ∞ V(BR)CBO Collector-Base Breakdown Voltage IC= -5mA, IE= 0 VCE(sat) Collector-Emitter Saturation Voltage ...

Similar Datasheet

2SB880
PNP Transistor
(Sanyo Semicon Device)
2SB880
SILICON POWER TRANSISTOR
(SavantIC)
2SB880
PNP Transistor
(INCHANGE)
2SB881
PNP Transistor
(Sanyo Semicon Device)
2SB881
Silicon PNP Power Transistor
(Inchange Semiconductor)
2SB882
PNP Transistor
(Sanyo Semicon Device)
2SB882
Silicon PNP Power Transistor
(Inchange Semiconductor)
2SB883
PNP Transistor
(Sanyo Semicon Device)
2SB883
Silicon PNP Power Transistor
(Inchange Semiconductor)

INDEX :5 7 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z

Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)