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BD896A

Part Number	BD896A
Manufacturer	INCHANGE
Title	PNP Transistor
Description	·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -45V(Min) ·High DC Current Gain : hFE= 750(Min) @I...
Features	Resistance,Junction to Ambient 62.5 ℃/W isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silic...
Published	Sep 22, 2020
Datasheet	BD896A PDF File

BD896A
BD896A

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Features

Resistance,Junction to Ambient 62.5 ℃/W isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon PNP Darlington Power Transistor BD896A ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDI...

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