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2SC1617

INCHANGE
Part Number 2SC1617
Manufacturer INCHANGE
Title NPN Transistor
Description ·Silicon NPN triple diffused type ·High voltage ·Wide area of safe operation ·100% avalanche tested ...
Features E(sat) Collector-Emitter Saturation Voltage IC=5A; IB= 0.5A VBE(sat) Base-Emitter Saturation Voltage IC=5A; IB= 0.5A ...
Published Sep 28, 2020
Datasheet PDF File 2SC1617 PDF File


2SC1617
2SC1617


Features
E(sat) Collector-Emitter Saturation Voltage IC=5A; IB= 0.5A VBE(sat) Base-Emitter Saturation Voltage IC=5A; IB= 0.5A V(BR)CEO Collector-Emitter Breakdown Voltage IC= 25mA; IB= 0 V(BR)EBO Emitter-Base Breakdown Voltage IE= 1mA; IC= 0 hFE DC Cur...



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