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2SD817

Part Number	2SD817
Manufacturer	INCHANGE
Title	NPN Transistor
Description	·High Breakdown Voltage- : VCBO= 1500V (Min) ·Low collector saturation voltage ·Wide area of safe op...
Features	n Voltage IE= 1mA; IC= 0 V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA; IB= 0 VCE(sat) Collector-Emitter Satu...
Published	Sep 29, 2020
Datasheet	2SD817 PDF File

Features

n Voltage IE= 1mA; IC= 0 V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA; IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 1.2A; IB= 0.3A MIN MAX UNIT 6 V 600 V 5.0 V VBE(sat) Base-Emitter Saturation Voltage IC= 1.2A; IB= 0.3...

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