Part Number | 2SD956 |
Manufacturer | INCHANGE |
Title | NPN Transistor |
Description | ·High Breakdown Voltage- : VCBO= 1500V (Min) ·Low Collector Saturation Voltage- : VCE(sat)= 4.0V(Max.)@ IC= 2A ·Built-in Damper Diode ·Minimum Lot... |
Features |
MIN TYP. MAX UNIT
VEBO
Emitter-Base Breakdown Voltage
IE= 200mA; IC= 0
5.0
V
VCE(sat) Collector-Emitter Saturation Voltage IC= 2A; IB= 0.75A
VBE(sat) Base-Emitter Saturation Voltage
IC= 2A; IB= 0.75A
ICBO
Collector Cutoff Current
VCB= 750V...
|
Published | Sep 29, 2020 |
Datasheet | 2SD956 PDF File |