2SD1386

2SD1380 : ·High Collector Current -IC= 2A ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 32V(Min) ·Good Linearity of hFE ·Low Saturation Voltage ·Complement to Type 2SB1009 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for low frequency power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 40 V VCEO Collector-Emitter Voltage 32 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 2 A 10 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ 2SD1380 isc website：www.iscsemi.co.

2SD1380 : ·With TO-126 package ·Complement to type 2SB1009 ·Low collector saturation voltage APPLICATIONS ·For low frequency power amplifier applications PINNING PIN 1 2 3 DESCRIPTION Emitter Collector;connected to mounting base Base Absolute maximum ratings(Ta=25 ) SYMBOL VCBO VCEO VEBO IC PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector power dissipation Junction temperature Storage temperature TC=25 CONDITIONS Open emitter Open base Open collector VALUE 40 32 5 2 10 150 -55~150 UNIT V V V A W SavantIC Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER C.

2SD1381F : 2SD1898 / 2SD1733 / 2SD1768S / 2SD1863 / 2SD1381F Transistors Power Transistor (80V, 1A) 2SD1898 / 2SD1733 / 2SD1768S / 2SD1863 / 2SD1381F !Features 1) High VCEO, VCEO=80V 2) High IC, IC=1A (DC) 3) Good hFE linearity 4) Low VCE (sat) 5) Complements the 2SB1260 / 2SB1241 / 2SB1181 !External dimensions (Units : mm) 2SD1898 0.5±0.1 0.2 4.5+ −0.1 1.6±0.1 0.2 1.5 + −0.1 4.0±0.3 2.5+0.2 −0.1 (1) 1.0±0.2 (2) (3) 0.4±0.1 1.5±0.1 0.1 0.4+ −0.05 0.4±0.1 1.5±0.1 0.5±0.1 3.0±0.2 !Structure Epitaxial planer type NPN silicon transistor ROHM : MPT3 EIAJ : SC-62 Abbreviated symbol : DF (1) Base (2) Collector (3) Emitter 2SD1733 1.5±0.3 2SD1768S 4±0.2 2±0.2 3±0.2 0.3 5.5+ −0.1 9.5±0.5 (15M.

2SD1382 : www.DataSheet4U.com www.DataSheet4U.com www.DataSheet4U.com .

2SD1382 : www.DataSheet4U.com .

2SD1383K : 2SD1383K High-gain Amplifer Transistor (32V, 0.3A) Parameter VCES IC R Value 32V 0.3A 4kΩ lFeatures 1)Darlington connection for high DC current gain. 2)Built-in 4kΩ resistor between base and emitter. 3)Complements the 2SB852K. lOutline 　 SOT-346 　 SC-59 SMT3 lInner circuit 　 　 　 　 　 Datasheet lApplication HIGH GAIN AMPLIFIER lPackaging specifications 　　　　　　　　　　　　　　　　　　　　　　 Part No. Package Package size Taping code Reel size Tape width (mm) (mm) Basic ordering unit.(pcs) Marking 2SD1383K SOT-346 2928 T146 180 8 3000 W (SMT3) 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　　 　 　 　 　 　 　 　 　 　 　 www.rohm.com © 2016 ROHM Co., Ltd. All rights reserved..

2SD1384 : .

2SD1385 : Transistor 2SD1385 Silicon NPN triple diffusion planer type For low-frequency output amplification Unit: mm 6.9±0.1 2.5±0.1 1.0 1.0 2.4±0.2 2.0±0.2 3.5±0.1 s Features q q q q q 1.5 0.4 1.5 R0.9 R0.9 High collector to base voltage VCBO. High collector to emitter voltage VCEO. Large collector power dissipation PC. Low collector to emitter saturation voltage VCE(sat). M type package allowing easy automatic and manual insertion as well as stand-alone fixing to the printed circuit board. 1.0±0.1 R 0. 0.85 0.55±0.1 1.25±0.05 0.45±0.05 s Absolute Maximum Ratings Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector curr.