Part Number | BD539C |
Manufacturer | INCHANGE |
Title | NPN Transistor |
Description | ·DC Current Gain - : hFE = 40(Min.)@ IC= 0.5A ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 100V(Min) ·Complement to Type BD540C ·Minimum Lot-... |
Features |
er Transistor
BD539C
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-Emitter Breakdown Voltage IC= 30mA; IB= 0
VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 1A; IB= 0.125A
VCE(...
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Published | Sep 30, 2020 |
Datasheet | BD539C PDF File |