·ELECTRICAL CHARACTERISTICS (TC=25℃) INCHANGE Semiconductor 60N06-18 SYMBOL PARAMETER CONDITIONS V(BR)DSS Drain-Source Breakdown Voltage VGS= 0; ID= 250µA VGS(th) Gate Threshold Voltage VDS= VGS; ID=1mA VSD Diode Forward On-Vo...
60N06-18 PDF File
| Part Number | 60N06-18 |
| Manufacturer | INCHANGE |
| Title | N-Channel MOSFET |
| Description | ·High current capability ·Avalanche rugged technology ·Low gate charge ·Fast Switching Speed ·Minimum Lot-to-Lot variations for robust device perf... |
| Features |
ET Transistor
·ELECTRICAL CHARACTERISTICS (TC=25℃) INCHANGE Semiconductor 60N06-18 SYMBOL PARAMETER CONDITIONS V(BR)DSS Drain-Source Breakdown Voltage VGS= 0; ID= 250µA VGS(th) Gate Threshold Voltage VDS= VGS; ID=1mA VSD Diode Forward On-Vo... |
| Published | Sep 30, 2020 |
| Datasheet |
60N06-18 PDF File
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