| Part Number | STP25N10F7 |
| Manufacturer | INCHANGE |
| Title | N-Channel MOSFET |
| Description | ·These devices utilize the 7th generation of design rules of ST Proprietary,with a new gate structure. ·Low Drain-Source On-Resistance APPLICATIO... |
| Features |
·Drain Current –ID= 25A@ TC=25℃ ·Drain Source Voltage- : VDSS= 100V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.035Ω(Max) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·These devices utilize the 7th generation of des... |
| File Size | 233.34KB |
| Datasheet |
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STP25N10F7 : th These devices utilize the 7 generation of design rules of ST’s proprietary STripFET™ technology, with a new gate structure. The resulting Power MOSFET exhibits the lowest RDS(on) in all packages. 6 $0Y Order codes STD25N10F7 STF25N10F7 STP25N10F7 Table 1. Device summary Marking Package 25N10F7 25N10F7 25N10F7 DPAK TO-220FP TO-220 September 2013 This is information on a product in full production. DocID.