Part Number | IPB065N03L |
Manufacturer | INCHANGE |
Title | N-Channel MOSFET |
Description | ·Drain Current :ID= 50A@ TC=25℃ ·Drain Source Voltage : VDSS= 30V(Min) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device per... |
Features |
Source Breakdown Voltage
VGS= 0; ID= 1mA
30
V
VGS(th) Gate Threshold Voltage
VDS= VGS; ID=250µA
1
2.2
V
RDS(on) Drain-Source On-Resistance
VGS= 10V; ID=30A
6.5 mΩ
IGSS
Gate-Body Leakage Current
VGS= 20V;VDS= 0
100
nA
IDSS
Zero Gate ...
|
Published | Oct 28, 2020 |
Datasheet | IPB065N03L PDF File |