| Part Number | IXFH76N15T2 |
| Manufacturer | IXYS |
| Title | Power MOSFET |
| Description | TrenchT2TM HiperFETTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated Fast Intrnsic Rectifier IXFA76N15T2 IXFP76N15T2 IXFH76N15T2 Symbol... |
| Features |
International Standard Packages 175°C Operating Temperature High Current Handling Capability Fast Intrinsic Rectifier Dynamic dv/dt Rated Low RDS(on) Advantages Easy to Mount Space Savings High Power Density Applications DC-DC Converters Battery Chargers Switch-Mode and Reson... |
| File Size | 365.69KB |
| Datasheet |
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IXFH76N15T2 : isc N-Channel MOSFET Transistor ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤ 20mΩ@VGS=10V ·Fully characterized avalanche voltage and current ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATION ·DC/DC Converters ·High Speed Power Switching Applications ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 150 V VGS Gate-Source Voltage ±20 V ID Drain Current-Continuous 76 A IDM Drain Current-Single Pulsed 200 A PD Total Dissipation @TC=25℃ 350 W Tj Operating Junction Temperature -55~175 ℃ Tstg Storage Temperature -55~175 ℃ ·THERMAL CHARACTERISTICS.