| Part Number | IXFH80N60X2A |
| Manufacturer | IXYS |
| Title | Power MOSFET |
| Description | Advance Technical Information X2-Class HiPerFETTM Power MOSFET AEC Q101 Qualified IXFH80N60X2A VDSS = ID25 = RDS(on) 600V 80A 38m N-Channe... |
| Features |
International Standard Package Low RDS(ON) and QG Avalanche Rated Low Package Inductance Advantages High Power Density Easy to Mount Space Savings Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) BVDSS VGS = 0V, ID = 1mA VGS(th) VDS = VGS, ID = 4mA IGSS VGS = 30... |
| File Size | 177.23KB |
| Datasheet |
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IXFH80N60X2A : isc N-Channel MOSFET Transistor ·FEATURES ·Drain Source Voltage- : VDSS= 600V(Min) ·Static Drain-Source On-Resistance : RDS(on) ≤38mΩ@VGS= 10V ·Fast Switching ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Easy to Mount ·Space Savings ·High Power Density ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 600 V VGS Gate-Source Voltage-Continuous ±30 V ID Drain Current-Continuous 80 A IDM Drain Current-Single Plused 160 A PD Total Dissipation @TC=25℃ 890 W Tj Max. Operating Junction Temperature -55~150 ℃ Tstg Storage Temperature -55~150 ℃ ·THERMAL CHA.