| Part Number | IXFH94N30T |
| Manufacturer | IXYS |
| Title | Power MOSFET |
| Description | Preliminary Technical Information TrenchTM HiperFETTM Power MOSFETs IXFT94N30T IXFH94N30T VDSS = 300V ID25 = 94A ≤ RDS(on) 36mΩ N-Channel Enha... |
| Features |
z International Standard Packages z Avalanche Rated z High Current Handling Capability z Fast Intrinsic Rectifier z Low RDS(on)
Advantages
z Easy to Mount z Space Savings z High Power Density
Applications
z DC-DC Converters z Battery Chargers z Switch-Mode and Resonant-Mode
Power Supplies z DC Chopp...
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| File Size | 177.52KB |
| Datasheet |
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IXFH94N30T : isc N-Channel MOSFET Transistor ·FEATURES ·Drain Source Voltage- : VDSS= 300V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 36mΩ(Max) ·Fast Switching ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Switch-Mode and Resonant-Mode Power Supplies ·DC-DC Converters ·AC and DC Motor Drives ·Robotics and Servo Controls ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 300 V VGS Gate-Source Voltage-Continuous ±20 V ID Drain Current-Continuous 94 A IDM Drain Current-Single Plused 235 A PD Total Dissipation @TC=25℃ 890 W Tj Max. Operating Junction Temperatu.