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2N5882

Part Number	2N5882
Manufacturer	NTE
Title	Silicon NPN Power Transistor
Description	The 2N5882 is a silicon NPN transistor in a TO−3 type package designed for use in general purpose p...
Features	D Low Collector−Emitter Saturation Voltage: VCE(sat) = 1V (Max) at IC = 7A D Excellent DC Current Gain: hFE = 20 − 100 ...
Published	Nov 9, 2020
Datasheet	2N5882 PDF File

Features

D Low Collector−Emitter Saturation Voltage: VCE(sat) = 1V (Max) at IC = 7A D Excellent DC Current Gain: hFE = 20 − 100 @ IC = 6A Absolute Maximum Ratings: Collector−Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ....

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