| Part Number | TK56E12N1 |
| Manufacturer | INCHANGE |
| Title | N-Channel MOSFET |
| Description | Isc N-Channel MOSFET Transistor TK56E12N1 ·FEATURES ·Low drain-source on-resistance: RDS(ON) = 7.5mΩ (VGS = 10 V) ·Enhancement mode: Vth = 2.0 t... |
| Features |
·Low drain-source on-resistance: RDS(ON) = 7.5mΩ (VGS = 10 V) ·Enhancement mode: Vth = 2.0 to 4.0V (VDS = 10 V, ID=1.0mA) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Switching Voltage Regulators ·ABSOLUTE MAXIMUM RATINGS(Ta... |
| File Size | 278.70KB |
| Datasheet |
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TK56E12N1 : TK56E12N1 MOSFETs Silicon N-channel MOS (U-MOS-H) TK56E12N1 1. Applications • Switching Voltage Regulators 2. Features (1) (2) (3) Low drain-source on-resistance: RDS(ON) = 5.8 mΩ (typ.) (VGS = 10 V) Low leakage current: IDSS = 10 µA (max) (VDS = 120 V) Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1.0 mA) 3. Packaging and Internal Circuit 1: Gate 2: Drain (heatsink) 3: Source TO-220 4. Absolute Maximum Ratings (Note) (Ta = 25 unless otherwise specified) Characteristics Drain-source voltage Gate-source voltage Drain current (DC) Drain current (DC) Drain current (pulsed) Power dissipation Single-pulse avalanche energy Avalanche current Channel temperature Storage temperature .