| Part Number | TK75J04K3Z |
| Manufacturer | INCHANGE |
| Title | N-Channel MOSFET |
| Description | iscN-Channel MOSFET Transistor TK75J04K3Z ·FEATURES ·Low drain-source on-resistance: RDS(ON) = 3mΩ (MAX) ·Enhancement mode: Vth = 3 to 4V (VDS =... |
| Features |
·Low drain-source on-resistance: RDS(ON) = 3mΩ (MAX) ·Enhancement mode: Vth = 3 to 4V (VDS = 10 V, ID=1.0mA) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Switching Voltage Regulators ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBO... |
| File Size | 277.59KB |
| Datasheet |
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TK75J04K3Z : TK75J04K3Z MOSFETs Silicon N-channel MOS (U-MOS) TK75J04K3Z 1. Applications • • Motor Drivers Switching Voltage Regulators 2. Features (1) (2) (3) Low drain-source on-resistance: RDS(ON) = 2.2 mΩ (typ.) (VGS = 10 V) Low leakage current: IDSS = 10 µA (max) (VDS = 40 V) Enhancement mode: Vth = 3.0 to 4.0 V (VDS = 10 V, ID = 1 mA) 3. Packaging and Internal Circuit 1: Gate 2: Drain (heatsink) 3: Source TO-3P(N) 4. Absolute Maximum Ratings (Note) (Ta = 25 unless otherwise specified) Characteristics Drain-source voltage Gate-source voltage Drain current (DC) Drain current (pulsed) Power dissipation Single-pulse avalanche energy Avalanche current Channel temperature Storage temperature (Not.