| Part Number | TK12A80W |
| Manufacturer | INCHANGE |
| Title | TO-220 N-Channel MOSFET |
| Description | iscN-Channel MOSFET Transistor TK12A80W ·FEATURES ·Low drain-source on-resistance: RDS(ON) = 450mΩ (MAX) ·Enhancement mode: Vth = 3.0 to 4.0V (V... |
| Features |
·Low drain-source on-resistance: RDS(ON) = 450mΩ (MAX) ·Enhancement mode: Vth = 3.0 to 4.0V (VDS = 10 V, ID=0.57mA) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Switching Voltage Regulators ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃)... |
| File Size | 280.16KB |
| Datasheet |
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TK12A80W : MOSFETs Silicon N-Channel MOS (DTMOS) TK12A80W 1. Applications • Switching Voltage Regulators 2. Features (1) Low drain-source on-resistance: RDS(ON) = 0.38 Ω (typ.) by using Super Junction Structure : DTMOS (2) Easy to control Gate switching (3) Enhancement mode: Vth = 3.0 to 4.0 V(VDS = 10 V, ID = 0.57 mA) 3. Packaging and Internal Circuit TK12A80W 1: Gate 2: Drain 3: Source TO-220SIS 4. Absolute Maximum Ratings (Note) (Ta = 25 unless otherwise specified) Characteristics Symbol Rating Unit Drain-source voltage Gate-source voltage Drain current (DC) Drain current (pulsed) Power dissipation Single-pulse avalanche energy Single-pulse avalanche current Reverse drain current (DC) Re.
TK12A80W : iscN-Channel MOSFET Transistor INCHANGE Semiconductor TK12A80W，ITK12A80W ·FEATURES ·Low drain-source on-resistance: RDS(ON) = 0.38Ω (typ.) ·Enhancement mode: Vth = 3.0 to 4.0V (VDS = 10 V, ID=0.57mA) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Switching Voltage Regulators ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 800 VGS Gate-Source Voltage ±20 ID Drain Current-Continuous 11.5 IDM Drain Current-Single Pulsed 46 PD Total Dissipation @TC=25℃ 45 Tj Max. Operating Junction Temperature 150 Tstg Storage Temperature -55~150 UNIT V V A A W ℃ ℃ ·THERMAL CH.