Part Number | TK14N65W5 |
Manufacturer | INCHANGE |
Title | N-Channel MOSFET |
Description | isc N-Channel MOSFET Transistor TK14N65W5 FEATURES ·Low drain-source on-resistance: RDS(on) ≤0.3Ω. ·Enhancement mode: Vth =3 to 4.5V (VDS = 10 V... |
Features |
·Low drain-source on-resistance: RDS(on) ≤0.3Ω. ·Enhancement mode: Vth =3 to 4.5V (VDS = 10 V, ID=0.69mA) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION ·Switching Voltage Regulators ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL P... |
File Size | 383.65KB |
Datasheet |
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TK14N65W : TK14N65W MOSFETs Silicon N-Channel MOS (DTMOS) TK14N65W 1. Applications • Switching Voltage Regulators 2. Features (1) (2) (3) Low drain-source on-resistance: RDS(ON) = 0.22 Ω (typ.) by used to Super Junction Structure : DTMOS Easy to control Gate switching Enhancement mode: Vth = 2.5 to 3.5 V (VDS = 10 V, ID = 0.69 mA) 3. Packaging and Internal Circuit 1: Gate 2: Drain (Heatsink) 3: Source TO-247 4. Absolute Maximum Ratings (Note) (Ta = 25 unless otherwise specified) Characteristics Drain-source voltage Gate-source voltage Drain current (DC) Drain current (pulsed) Power dissipation Single-pulse avalanche energy Avalanche current Reverse drain current (DC) Reverse drain current (puls.
TK14N65W : isc N-Channel MOSFET Transistor TK14N65W FEATURES ·Low drain-source on-resistance: RDS(on) ≤0.25Ω. ·Enhancement mode: Vth =2.5 to 3.5V (VDS = 10 V, ID=0.69mA) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION ·Switching Voltage Regulators ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 650 V VGS Gate-Source Voltage ±30 V ID Drain Current-Continuous 13.7 A IDM Drain Current-Single Pulsed 54.8 A PD Total Dissipation @TC=25℃ 130 W Tj Max. Operating Junction Temperature 150 ℃ Tstg Storage Temperature -55~150 ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER .
TK14N65W5 : MOSFETs Silicon N-Channel MOS (DTMOS) TK14N65W5 1. Applications • Switching Voltage Regulators 2. Features (1) Fast reverse recovery time: trr = 100 ns (typ.) (2) Low drain-source on-resistance: RDS(ON) = 0.25 Ω (typ.) by using Super Junction Structure : DTMOS (3) Easy to control Gate switching (4) Enhancement mode: Vth = 3 to 4.5 V (VDS = 10 V, ID = 0.69 mA) 3. Packaging and Internal Circuit TK14N65W5 1: Gate 2: Drain (Heatsink) 3: Source TO-247 4. Absolute Maximum Ratings (Note) (Ta = 25 unless otherwise specified) Characteristics Symbol Rating Unit Drain-source voltage Gate-source voltage Drain current (DC) Drain current (pulsed) Power dissipation Single-pulse avalanche energy .