| Part Number | TK13J65U |
| Manufacturer | INCHANGE |
| Title | N-Channel MOSFET |
| Description | isc N-Channel MOSFET Transistor TK13J65U ·FEATURES ·Low drain-source on-resistance: RDS(on) ≤38mΩ. ·Enhancement mode: Vth =3.0 to 5.0V (VDS = 10... |
| Features |
·Low drain-source on-resistance: RDS(on) ≤38mΩ. ·Enhancement mode: Vth =3.0 to 5.0V (VDS = 10 V, ID=1mA) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Switching Voltage Regulators ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL P... |
| File Size | 264.49KB |
| Datasheet |
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TK13J65U : TK13J65U MOSFETs Silicon N-Channel MOS (DTMOS) TK13J65U 1. Applications • Switching Voltage Regulators 2. Features (1) (2) (3) (4) Low drain-source on-resistance: RDS(ON) = 0.32 Ω (typ.) High forward transfer admittance: |Yfs| = 8.0 S (typ.) Low leakage current: IDSS = 100 µA (max) (VDS = 650 V) Enhancement mode: Vth = 3.0 to 5.0 V (VDS = 10 V, ID = 1 mA) 3. Packaging and Internal Circuit 1: Gate (G) 2: Drain (D) (Heatsink) 3: Source (S) TO-3P(N) 4. Absolute Maximum Ratings (Note) (Ta = 25 unless otherwise specified) Characteristics Drain-source voltage Gate-source voltage Drain current (DC) Drain current (pulsed) Power dissipation Single-pulse avalanche energy Avalanche current Repe.