| Part Number | IXTQ96N20P |
| Manufacturer | INCHANGE |
| Title | N-Channel MOSFET |
| Description | isc N-Channel MOSFET Transistor ·FEATURES ·Drain Source Voltage- : VDSS= 200V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 24mΩ(Max) ·Fast... |
| Features |
·Drain Source Voltage- : VDSS= 200V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 24mΩ(Max) ·Fast Switching ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Switch-Mode and Resonant-Mode Power Supplies ·DC-DC Converters ... |
| File Size | 253.02KB |
| Datasheet |
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IXTQ96N20P : PolarHTTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated IXTH 96N20P IXTQ 96N20P IXTT 96N20P V DSS ID25 RDS(on) = 200 V = 96 A ≤ 24 mΩ TO-247 (IXTH) Symbol VDSS VDGR VGSS V GSM ID25 ID(RMS) IDM IAR EAR EAS dv/dt PD T J TJM Tstg TL TSOLD Md Weight Test Conditions TJ = 25° C to 150° C TJ = 25° C to 150° C; RGS = 1 MΩ Continous Transient TC = 25° C External lead current limit TC = 25° C, pulse width limited by TJM TC = 25° C TC = 25° C TC = 25° C IS ≤IDM, di/dt ≤100 A/µs, VDD ≤VDSS, TJ ≤150° C, RG = 4 Ω TC = 25° C 1.6 mm (0.062 in.) from case for 10 s Plastic body for 10 s Mounting torque (TO-3P, TO-247) TO-3P TO-247 TO-268 Maximum Ratings 200 V 200 V ±20 V ±30 V 96 A .