Part Number | DS15 |
Manufacturer | INCHANGE |
Title | NPN Transistor |
Description | ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 100V(Min) ·Fast Switching Speeds ·Minimum Lot-to-Lot variations for robust device performance an... |
Features |
=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA; IB= 0
V(BR)CBO Collector-Base Breakdown Voltage
IC= 1mA; IE= 0
VCE(sat) Collector-EmitterSaturation Voltage
IC= 0.2A ;IB= 0.02A...
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Published | Nov 25, 2020 |
Datasheet | DS15 PDF File |