STP10NM60N

STP10NM60N : * 6 Order code These devices are N-channel Power MOSFETs developed using the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters. $0Y Table 1. Device summary Marki.

STP10NM60ND : These FDmesh™ II Power MOSFETs with fastrecovery body diode are produced using MDmesh™ II technology. Utilizing a new striplayout vertical structure, these devices feature low on-resistance and superior switching performance. They are ideal for bridge topologies and ZVS phase-shift converters. Table 1: Device summary Marking Package Packing DPAK Tape and reel 10N.

STP10NM60ND : Isc N-Channel MOSFET Transistor STP10NM60ND ·FEATURES ·With TO-220 package ·Low input capacitance and gate charge ·Low gate input resistance ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Switching applications ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 600 V VGSS Gate-Source Voltage ±25 V ID Drain Current-Continuous@TC=25℃ TC=125℃ 8 5 A IDM Drain Current-Single Pulsed 32 A PD Total Dissipation @TC=25℃ 70 W Tch Max. Operating Junction Temperature 150 ℃ Tstg Storage Temperature -55~150 ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth(ch-.