|
Part Number
|
TRS10E65F |
|
Manufacturer
|
Toshiba |
|
Title
|
SiC Schottky Barrier Diode |
|
Description
|
SiC Schottky Barrier Diode
TRS10E65F
1. Applications
• Power Factor Correction • Solar Inverters • Uninterruptible Power Supplies • DC-DC Converte...
|
|
Features
|
(1) Chip design of 2nd generation. (2) High surge current capability : IFSM = 83A (Max) (3) The junction capacitance is small : Cj = 36 pF (Typ.) (4) The reverse current is small. : IR = 0.5 µA (Typ.)
3. Packaging and Internal Circuit
TRS10E65F
TO-...
|
|
Datasheet
|
TRS10E65F PDF File
|