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RJP63F3A

Renesas
Part Number RJP63F3A
Manufacturer Renesas (https://www.renesas.com/)
Title N-Channel IGBT
Description RJP63F3DPP-M0 Silicon N Channel IGBT High Speed Power Switching Features • Trench gate and thin wafe...
Features • Trench gate and thin wafer technology (G6H series) • Low collector to emitter saturation voltage VCE(sat) = 1.7 V typ ...
Published Jul 28, 2021
Datasheet PDF File RJP63F3A PDF File


RJP63F3A
RJP63F3A

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Features

• Trench gate and thin wafer technology (G6H series)
• Low collector to emitter saturation voltage VCE(sat) = 1.7 V typ
• High speed switching tf = 100 ns typ
• Low leak current ICES = 1 μA max
• Isolated package TO-220FL Outline RENESAS Package co...



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