| Part Number | RSJ250P10 |
| Manufacturer | Inchange Semiconductor |
| Title | P-Channel MOSFET Transistor |
| Description | isc P-Channel MOSFET Transistor RSJ250P10 ·FEATURES ·Drain Current –ID= -25A@ TC=25℃ ·Drain Source Voltage : VDSS= -100V(Min) ·Static Drain-Sour... |
| Features |
·Drain Current –ID= -25A@ TC=25℃ ·Drain Source Voltage : VDSS= -100V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 63mΩ(Max) @VGS=10V ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Be suitable for synchronous rectificati... |
| File Size | 339.71KB |
| Datasheet |
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RSJ250P10 : .
RSJ250P10FRA : 4V Drive Pch MOSFET RSJ250P10FRA z Structure Silicon P-channel MOSFET zFeatures 1) Low on-resistance. 2) Built-in G-S Protection Diode. z Application Switching Data Sheet AEC-Q101 Qualified z Dimensions (Unit : mm) LPTS 10.1 4.5 1.3 13.1 9.0 1.0 3.0 1.24 2.54 0.78 5.08 (1) (2) (3) 0.4 2.7 1.2 z Packaging specifications Package Type Code Basic ordering unit (pieces) RSJ250P10 FRA Taping TL 1000 ۑ z Inner circuit ∗1 ∗2 z Absolute maximum ratings (Ta = 25qC) Parameter Symbol Limits Drain-source voltage Gate-source voltage Drain current Source current (Body Diode) Power dissipation Channel temperature Continuous Pulsed Continuous Pulsed VDSS VGSS ID IDP IS ISP PD Tch *1 *2.