| Part Number | SW6N60D |
| Manufacturer | Samwin |
| Title | N-channel MOSFET |
| Description | This power MOSFET is produced with advanced technology of SAMWIN. This technology enable the power MOSFET to have better characteristics, includin... |
| Features |
TO-220F TO-252 TO-251N
High ruggedness Low RDS(ON) (Typ 1.4Ω)@VGS=10V Low Gate Charge (Typ 23nC) Improved dv/dt Capability 100% Avalanche Tested Application: UPS,Inverter,TV-POWER 12 3 123 123 1. Gate 2. Drain 3. Source General Description This power MOSFET is produced with advanc... |
| File Size | 835.93KB |
| Datasheet |
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SW6N60 : These N-channel enhancement mode power field effect transistors are produced using SAMWIN’s proprietary, planar stripe, DMOS technology. This advanced technology enable power MOSFET to have better characteristics, such as fast switching time, low on resistance, low gate charge and especially excellent avalanche characteristics. These devices are widely used in AC-DC power suppliers, DC-DC converters and H-bridge PWM motor drivers BVDSS : 600V ID : 6A RDS(ON) :1.5ohm 2 1 3 Order Codes Item 1 2 3 Sales Type SW F 6N60 SW I 6N60 SW D 6N60 Absolute maximum ratings Marking SW6N60 SW6N60 SW6N60 Symbol Parameter VDSS ID IDM VGS EAS EAR dv/dt Drain to Source Voltage Continuous Drain Current .