• AEC-Q101 qualified
• Maximum junction temperature: TJ = 175 °C
• Low VCE(sat) = 1.6 V (typ.) @ IC = 75 A
• Co-packed with high ruggedness rectifier diode
• Minimized tail current
• Tight param...
GWA75H65DRFB2AG PDF File
| Part Number | GWA75H65DRFB2AG |
| Manufacturer | STMicroelectronics (https://www.st.com/) |
| Title | Automotive-grade trench gate field-stop IGBT |
| Description | The newest IGBT 650 V HB2 series represents an evolution of the advanced proprietary trench gate field-stop structure. The performances are optim... |
| Features |
TO-247 long leads C(2, TAB)
G(1)
E(3)
NG1E3C2T
• AEC-Q101 qualified • Maximum junction temperature: TJ = 175 °C • Low VCE(sat) = 1.6 V (typ.) @ IC = 75 A • Co-packed with high ruggedness rectifier diode • Minimized tail current • Tight param... |
| Published | Feb 16, 2024 |
| Datasheet |
GWA75H65DRFB2AG PDF File
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