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CGHV50200F

MACOM
Part Number CGHV50200F
Manufacturer MACOM
Title GaN HEMT
Description The CGHV50200F is a gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically with high efficiency, high gain and wide ...
Features
• 4.4 - 5.0 GHz Operation
• 180 W Typical PSAT
• 11.5 dB Typical Power Gain
• 48% Typical Power Efficiency
• 50 Ohm Internally Matched Applications
• Troposcatter Communications
• Beyond Line of Sight
  – BLOS
• Satellite Communications Typical Perfo...

Published May 13, 2024
Datasheet PDF File CGHV50200F PDF File


CGHV50200F
CGHV50200F


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