Part Number | CGH31240F |
Manufacturer | MACOM |
Title | GaN HEMT |
Description | The CGH31240F is a gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically with high efficiency, high gain and wide b... |
Features |
• 2.7 - 3.1 GHz Operation • 12 dB Power Gain • 60% Power Added Efficiency • < 0.2 dB Pulsed Amplitude Droop Large Signal Models Available for ADS and MWO 1 MACOM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes... |
Published | May 13, 2024 |
Datasheet | CGH31240F PDF File |