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CGH31240F

MACOM
Part Number CGH31240F
Manufacturer MACOM
Title GaN HEMT
Description The CGH31240F is a gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically with high efficiency, high gain and wide b...
Features
• 2.7 - 3.1 GHz Operation
• 12 dB Power Gain
• 60% Power Added Efficiency
• < 0.2 dB Pulsed Amplitude Droop Large Signal Models Available for ADS and MWO 1 MACOM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes...

Published May 13, 2024
Datasheet PDF File CGH31240F PDF File


CGH31240F
CGH31240F


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