| Part Number | HS9-4080ARH-8 |
| Manufacturer | Intersil Corporation |
| Title | Radiation Hardened Full Bridge N-Channel FET Driver |
| Description | PIN NUMBER 1 SYMBOL BHB DESCRIPTION B High-side Bootstrap supply. External bootstrap diode and capacitor are required. Connect cathode of boot-st... |
| Features |
• Electrically Screened to SMD # 5962-99617 • QML Qualified per MIL-PRF-38535 Requirements • Radiation Environment - Gamma Dose . . . . . . . . . . . . . . . . . 300kRAD(Si) (Max) - Latch-up Immune RSG DI Process • Drives N-Channel FET Full Bridge Including High Side Chop Capability • Bootstrap Suppl... |
| File Size | 82.69KB |
| Datasheet |
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HS9-4080ARH-Q : PIN NUMBER 1 SYMBOL BHB DESCRIPTION B High-side Bootstrap supply. External bootstrap diode and capacitor are required. Connect cathode of boot-strap diode and positive side of bootstrap capacitor to this pin. Internal charge pump supplies 50µA out of this pin to maintain bootstrap supply. Internal circuitry clamps the bootstrap supply to approximately 15V. High-side Enable input. Logic level input that when low overrides IN+/IN- (Pins 6 and 7) to put AHO and BHO drivers (Pins 11 and 20) in low output state. When HEN is high AHO and BHO are controlled by IN+/IN- inputs. The pin can be driven by signal levels of 0V to 18V (no greater than VDD). An internal 100µA pull-up to VDD will hold HEN h.