– 20 Adc
• Monolithic Construction with Built
–in Base Emitter Shunt Resistor
• Junction Temperature to + 200_C MAXIMUM RATINGS Rating Symbol VCEO VCB VEB IC IB MJ11012 60 60 MJ11013 MJ11014 90 90 5 MJ11015 ...
MJ11013 PDF File
| Part Number | MJ11013 |
| Manufacturer | Motorola Inc |
| Title | 30 AMPERE DARLINGTON POWER TRANSISTORS |
| Description | MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MJ11012/D High-Current Complementary Silicon Transistors ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ... |
| Features |
igh DC Current Gain — hFE = 1000 (Min) @ IC – 20 Adc • Monolithic Construction with Built –in Base Emitter Shunt Resistor • Junction Temperature to + 200_C MAXIMUM RATINGS Rating Symbol VCEO VCB VEB IC IB MJ11012 60 60 MJ11013 MJ11014 90 90 5 MJ11015 ... |
| Published | Mar 26, 2005 |
| Datasheet |
MJ11013 PDF File
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MJ11011
MJ11012
MJ11012
MJ11012
MJ11012
MJ11013
MJ11013
MJ11014