| Part Number | 2SK1413 |
| Manufacturer | Sanyo Semicon Device |
| Title | N-Channel Silicon MOSFET |
| Description | Ordering number:EN4229 N-Channel Silicon MOSFET 2SK1413 Ultrahigh-Speed Switching Applications Features · Low ON resistance, low input capacitan... |
| Features |
· Low ON resistance, low input capacitance, Ultrahigh-speed switching. · High reliability (Adoption of HVP process). · Micaless package facilitating mounting. Package Dimensions unit:mm 2076B [2SK1413] 3.4 16.0 5.0 8.0 5.6 3.1 21.0 22.0 4.0 2.8 2.0 20.4 1.0 2.0 0.6 2.0 1 2 3 3.5 5.45 5.45 S... |
| File Size | 166.35KB |
| Datasheet |
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2SK1410 : ·Drain Current –ID=16A@ TC=25℃ ·Drain Source Voltage- : VDSS=500 (Min) ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high voltage, high speed power switching ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL ARAMETER VDSS Drain-Source Voltage (VGS=0) VALUE UNI T 500 V VGS Gate-Source Voltage ±20 V ID Drain Current-continuous@ TC=25℃ 16 A Ptot Total Dissipation@TC=25℃ 200 W Tj Max. Operating Junction Temperature 150 ℃ Tstg Storage Temperature Range -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT th j-c Thermal Resistance,Junction to Case 1.25 ℃/W th j-a Thermal Resistance,Junction to Ambient.
2SK1411 : ·Drain Current –ID=20A@ TC=25℃ ·Drain Source Voltage- : VDSS=500 (Min) ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed especially for high voltage,high speed applications, such as off-line switching power supplies , UPS,AC and DC motor controls,relay and solenoid drivers. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL ARAMETER VDSS Drain-Source Voltage (VGS=0) VALUE UNI T 500 V VGS Gate-Source Voltage ±20 V ID Drain Current-continuous@ TC=25℃ 20 A Ptot Total Dissipation@TC=25℃ 250 W Tj Max. Operating Junction Temperature 150 ℃ Tstg Storage Temperature Range -55~150 ℃ 2SK1411 isc website：www.iscsemi.cn 1 isc & i.
2SK1412 : Ordering number:EN4228 N-Channel Silicon MOSFET 2SK1412 Ultrahigh-Speed Switching Applications Features · Low ON resistance, low input capacitance, Ultrahigh-speed switching. · High reliability (Adoption of HVP process). · Micaless package facilitating mounting. Package Dimensions unit:mm 2078B 10.0 3.2 [2SK1412] 4.5 2.8 3.5 7.2 16.0 0.6 16.1 3.6 0.9 1.2 0.75 1 23 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Symbol Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) VDSS VGSS ID IDP Allowable Power Dissipation PD Channel Temperature Storage Temperature Tch Tstg 2.55 Conditions PW≤10µs, duty cycle≤1% Tc=25°C Electr.
2SK1414 : Ordering number:EN4230 N-Channel Silicon MOSFET 2SK1414 Ultrahigh-Speed Switching Applications Features · Low ON resistance, low input capacitance, Ultrahigh-speed switching. · High reliability (Adoption of HVP process). Package Dimensions unit:mm 2077A [2SK1414] 20.0 3.3 5.0 26.0 6.0 2.0 1.0 20.7 2.0 3.4 1.2 1 23 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Symbol Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) VDSS VGSS ID IDP Allowable Power Dissipation PD Channel Temperature Storage Temperature Tch Tstg 5.45 Conditions PW≤10µs, duty cycle≤1% Tc=25°C Electrical Characteristics at Ta = 25˚C Parameter Symbol Co.
2SK1416 : Ordering number:EN3554 Features · Low ON-state resistance. · Ultrahigh-speed switching. · Converters. N-Channel Silicon MOSFET 2SK1416 Ultrahigh-Speed Switching Applications Package Dimensions unit:mm 2052C [2SK1416] 10.2 3.6 5.1 4.5 1.3 2.7 6.3 15.1 18.0 5.6 1.2 0.8 123 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Symbol VDSS VGSS ID IDP Allowable Power Dissipation PD Channel Temperature Storage Temperature Tch Tstg 2.55 Conditions PW≤10µs, duty cycle≤1% Tc=25°C Electrical Characteristics at Ta = 25˚C 2.55 Parameter Symbol Conditions Drain-to-Source Breakdown .
2SK1417 : Ordering number:EN3555 Features · Low ON-state resistance. · Ultrahigh-speed switching. · Converters. N-Channel Silicon MOSFET 2SK1417 Ultrahigh-Speed Switching Applications Package Dimensions unit:mm 2052C [2SK1417] 10.2 3.6 5.1 4.5 1.3 2.7 6.3 15.1 18.0 5.6 1.2 0.8 123 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Symbol VDSS VGSS ID IDP Allowable Power Dissipation PD Channel Temperature Storage Temperature Tch Tstg 2.55 Conditions PW≤10µs, duty cycle≤1% Tc=25°C Electrical Characteristics at Ta = 25˚C 2.55 Parameter Symbol Conditions Drain-to-Source Breakdown .
2SK1418 : Ordering number:EN3556 Features · Low ON-state resistance. · Ultrahigh-speed switching. · Converters. N-Channel Silicon MOSFET 2SK1418 Ultrahigh-Speed Switching Applications Package Dimensions unit:mm 2052C [2SK1418] 10.2 3.6 5.1 4.5 1.3 2.7 6.3 15.1 18.0 5.6 1.2 0.8 123 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Symbol VDSS VGSS ID IDP Allowable Power Dissipation PD Channel Temperature Storage Temperature Tch Tstg 2.55 Conditions PW≤10µs, duty cycle≤1% Tc=25°C Electrical Characteristics at Ta = 25˚C 2.55 Parameter Symbol Conditions Drain-to-Source Breakdown .
2SK1419 : Ordering number:EN3557A N-Channel Silicon MOSFET 2SK1419 Ultrahigh-Speed Switching Applications Features · Low ON resistance. · Ultrahigh-speed switching. · Converters. · Micaless package facilitating mounting. Package Dimensions unit:mm 2063A [2SK1419] 4.5 10.0 2.8 3.2 3.5 7.2 16.0 18.1 5.6 1.6 1.2 0.75 123 2.55 2.55 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Symbol VDSS VGSS ID IDP Allowable Power Dissipation PD Channel Temperature Storage Temperature Tch Tstg 2.55 Conditions PW≤10µs, duty cycle≤1% Tc=25°C Electrical Characteristics at Ta = 25˚C Parameter Symbol Co.