| Part Number | 2SK1429 |
| Manufacturer | Sanyo Semicon Device |
| Title | N-Channel Silicon MOSFET |
| Description | Ordering number:EN3567 Features · Low ON-state resistance. · Ultrahigh-speed switching. · Converters. N-Channel Silicon MOSFET 2SK1429 Ultrahigh-... |
| Features |
· Low ON-state resistance. · Ultrahigh-speed switching. · Converters. N-Channel Silicon MOSFET 2SK1429 Ultrahigh-Speed Switching Applications Package Dimensions unit:mm 2052C [2SK1429] 10.2 3.6 5.1 4.5 1.3 2.7 6.3 15.1 18.0 5.6 1.2 0.8 123 Specifications Absolute Maximum Ratings at Ta =... |
| File Size | 96.89KB |
| Datasheet |
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2SK1420 : Ordering number:EN3558 N-Channel Silicon MOSFET 2SK1420 Ultrahigh-Speed Switching Applications Features · Low ON-state resistance. · Ultrahigh-speed switching. · Converters. · Micaless package facilitating mounting. Package Dimensions unit:mm 2063A [2SK1420] 4.5 10.0 2.8 3.2 3.5 7.2 16.0 18.1 5.6 1.6 1.2 0.75 123 2.55 2.55 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Symbol VDSS VGSS ID IDP Allowable Power Dissipation PD Channel Temperature Storage Temperature Tch Tstg 2.55 Conditions PW≤10µs, duty cycle≤1% Tc=25°C Electrical Characteristics at Ta = 25˚C Parameter Symbo.
2SK1421 : Ordering number:EN3559 N-Channel Silicon MOSFET 2SK1421 Ultrahigh-Speed Switching Applications Features · Low ON-state resistance. · Ultrahigh-speed switching. · Converters. · Micaless package facilitating mounting. Package Dimensions unit:mm 2063A [2SK1421] 4.5 10.0 2.8 3.2 3.5 7.2 16.0 18.1 5.6 1.6 1.2 0.75 123 2.55 2.55 Specifications 2.55 Absolute Maximum Ratings at Ta = 25˚C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Symbol VDSS VGSS ID IDP Allowable Power Dissipation PD Channel Temperature Storage Temperature Tch Tstg Conditions PW≤10µs, duty cycle≤1% Tc=25°C Electrical Characteristics at Ta = 25˚C Parameter Symb.
2SK1422 : Ordering number:EN3560 Features · Low ON-state resistance. · Ultrahigh-speed switching. · Converters. N-Channel Silicon MOSFET 2SK1422 Ultrahigh-Speed Switching Applications Package Dimensions unit:mm 2056A [2SK1422] 15.6 3.2 14.0 4.8 2.0 1.3 1.2 3.5 15.0 20.0 2.6 1.6 2.0 1.0 123 0.6 1.4 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Symbol VDSS VGSS ID IDP Allowable Power Dissipation PD Channel Temperature Storage Temperature Tch Tstg 5.45 Conditions PW≤10µs, duty cycle≤1% Tc=25°C Electrical Characteristics at Ta = 25˚C Parameter Symbol Conditions Drain-to-Source .
2SK1423 : Ordering number:EN3561 Features · Low ON-state resistance. · Ultrahigh-speed switching. · Converters. N-Channel Silicon MOSFET 2SK1423 Ultrahigh-Speed Switching Applications Package Dimensions unit:mm 2056A [2SK1423] 15.6 3.2 14.0 4.8 2.0 1.3 1.2 3.5 15.0 20.0 2.6 1.6 2.0 1.0 123 0.6 1.4 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Symbol VDSS VGSS ID IDP Allowable Power Dissipation PD Channel Temperature Storage Temperature Tch Tstg 5.45 Conditions PW≤10µs, duty cycle≤1% Tc=25°C Electrical Characteristics at Ta = 25˚C Parameter Symbol Conditions Drain-to-Source .
2SK1424 : Ordering number:EN3562 N-Channel Silicon MOSFET 2SK1424 Ultrahigh-Speed Switching Applications Features · Low ON-state resistance. · Ultrahigh-speed switching. · Converters. · Micaless package facilitating easy mounting. Package Dimensions unit:mm 2076B 16.0 3.4 [2SK1424] 5.6 3.1 5.0 8.0 22.0 2.0 21.0 4.0 2.8 2.0 1.0 123 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Symbol VDSS VGSS ID IDP Allowable Power Dissipation PD Channel Temperature Storage Temperature Tch Tstg 5.45 Conditions PW≤10µs, duty cycle≤1% Tc=25°C Electrical Characteristics at Ta = 25˚C 5.45 Paramet.
2SK1425 : Ordering number:EN3563 N-Channel Silicon MOSFET 2SK1425 Ultrahigh-Speed Switching Applications Features · Low ON-state resistance. · Ultrahigh-speed switching. · Converters. · Micaless package facilitating easy mounting. Package Dimensions unit:mm 2076B 16.0 3.4 [2SK1425] 5.6 3.1 5.0 8.0 22.0 2.0 21.0 4.0 2.8 2.0 1.0 123 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Symbol VDSS VGSS ID IDP Allowable Power Dissipation PD Channel Temperature Storage Temperature Tch Tstg 5.45 Conditions PW≤10µs, duty cycle≤1% Tc=25°C Electrical Characteristics at Ta = 25˚C 5.45 Parame.
2SK1426 : Ordering number:EN3564A Features · Low ON-state resistance. · Ultrahigh-speed switching. · Converters. N-Channel Silicon MOSFET 2SK1426 Ultrahigh-Speed Switching Applications Package Dimensions unit:mm 2077A [2SK1426] 20.0 3.3 5.0 26.0 6.0 2.0 1.0 20.7 2.0 3.4 1.2 1 23 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Symbol VDSS VGSS ID IDP Allowable Power Dissipation PD Channel Temperature Storage Temperature Tch Tstg 5.45 Conditions PW≤10µs, duty cycle≤1% Tc=25°C Electrical Characteristics at Ta = 25˚C Parameter Symbol Conditions Drain-to-Source Breakdown Voltage V(BR.
2SK1427 : Ordering number:EN3565 Features · Low ON-state resistance. · Ultrahigh-speed switching. · Converters. N-Channel Silicon MOSFET 2SK1427 Ultrahigh-Speed Switching Applications Package Dimensions unit:mm 2052C [2SK1427] 10.2 3.6 5.1 4.5 1.3 2.7 6.3 15.1 18.0 5.6 1.2 0.8 123 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Symbol VDSS VGSS ID IDP Allowable Power Dissipation PD Channel Temperature Storage Temperature Tch Tstg 2.55 Conditions PW≤10µs, duty cycle≤1% Tc=25°C Electrical Characteristics at Ta = 25˚C 2.55 Parameter Symbol Conditions Drain-to-Source Breakdown .
2SK1428 : Ordering number:EN3566 Features · Low ON-state resistance. · Ultrahigh-speed switching. · Converters. N-Channel Silicon MOSFET 2SK1428 Ultrahigh-Speed Switching Applications Package Dimensions unit:mm 2052C [2SK1428] 10.2 3.6 5.1 4.5 1.3 2.7 6.3 15.1 18.0 5.6 1.2 0.8 123 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Symbol VDSS VGSS ID IDP Allowable Power Dissipation PD Channel Temperature Storage Temperature Tch Tstg 2.55 Conditions PW≤10µs, duty cycle≤1% Tc=25°C Electrical Characteristics at Ta = 25˚C 2.55 Parameter Symbol Conditions Drain-to-Source Breakdown .