2SK1435

2SK1430 : Ordering number:EN3568 N-Channel Silicon MOSFET 2SK1430 Ultrahigh-Speed Switching Applications Features · Low ON-state resistance. · Ultrahigh-speed switching. · Converters. · Micaless package facilitating easy mounting. Package Dimensions unit:mm 2063A [2SK1430] 4.5 10.0 2.8 3.2 3.5 7.2 16.0 18.1 5.6 1.6 1.2 0.75 123 2.55 2.55 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Symbol VDSS VGSS ID IDP Allowable Power Dissipation PD Channel Temperature Storage Temperature Tch Tstg 2.55 Conditions PW≤10µs, duty cycle≤1% Tc=25°C Electrical Characteristics at Ta = 25˚C Parameter .

2SK1431 : Ordering number:EN3569 N-Channel Silicon MOSFET 2SK1431 Ultrahigh-Speed Switching Applications Features · Low ON-state resistance. · Ultrahigh-speed switching. · Converters. · Micaless package facilitating easy mounting. Package Dimensions unit:mm 2063A [2SK1431] 4.5 10.0 2.8 3.2 3.5 7.2 16.0 18.1 5.6 1.6 1.2 0.75 123 2.55 2.55 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Symbol VDSS VGSS ID IDP Allowable Power Dissipation PD Channel Temperature Storage Temperature Tch Tstg 2.55 Conditions PW≤10µs, duty cycle≤1% Tc=25°C Electrical Characteristics at Ta = 25˚C Parameter .

2SK1432 : Ordering number:EN3570 N-Channel Silicon MOSFET 2SK1432 Ultrahigh-Speed Switching Applications Features · Low ON-state resistance. · Ultrahigh-speed switching. · Converters. · Micaless package facilitating easy mounting. Package Dimensions unit:mm 2063A [2SK1432] 4.5 10.0 2.8 3.2 3.5 7.2 16.0 18.1 5.6 1.6 1.2 0.75 123 2.55 2.55 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Symbol VDSS VGSS ID IDP Allowable Power Dissipation PD Channel Temperature Storage Temperature Tch Tstg 2.55 Conditions PW≤10µs, duty cycle≤1% Tc=25°C Electrical Characteristics at Ta = 25˚C Parameter .

2SK1433 : Ordering number:EN3571 Features · Low ON-state resistance. · Ultrahigh-speed switching. · Converters. N-Channel Silicon MOSFET 2SK1433 Ultrahigh-Speed Switching Applications Package Dimensions unit:mm 2056A [2SK1433] 15.6 3.2 14.0 4.8 2.0 1.3 1.2 3.5 15.0 20.0 2.6 1.6 2.0 1.0 123 0.6 1.4 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Symbol VDSS VGSS ID IDP Allowable Power Dissipation PD Channel Temperature Storage Temperature Tch Tstg 5.45 Conditions PW≤10µs, duty cycle≤1% Tc=25°C Electrical Characteristics at Ta = 25˚C Parameter Symbol Conditions Drain-to-Source .

2SK1434 : Ordering number:EN3572 Features · Low ON-state resistance. · Ultrahigh-speed switching. · Converters. N-Channel Silicon MOSFET 2SK1434 Ultrahigh-Speed Switching Applications Package Dimensions unit:mm 2056A [2SK1434] 15.6 3.2 14.0 4.8 2.0 1.3 1.2 3.5 15.0 20.0 2.6 1.6 2.0 1.0 123 0.6 1.4 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Symbol VDSS VGSS ID IDP Allowable Power Dissipation PD Channel Temperature Storage Temperature Tch Tstg 5.45 Conditions PW≤10µs, duty cycle≤1% Tc=25°C Electrical Characteristics at Ta = 25˚C Parameter Symbol Conditions Drain-to-Source .

2SK1436 : Ordering number:EN3574 N-Channel Silicon MOSFET 2SK1436 Ultrahigh-Speed Switching Applications Features · Low ON-state resistance. · Ultrahigh-speed switching. · Converters. · Micaless package facilitating easy mounting. Package Dimensions unit:mm 2076B 16.0 3.4 [2SK1436] 5.6 3.1 5.0 8.0 22.0 2.0 21.0 4.0 2.8 2.0 1.0 123 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Symbol VDSS VGSS ID IDP Allowable Power Dissipation PD Channel Temperature Storage Temperature Tch Tstg 5.45 Conditions PW≤10µs, duty cycle≤1% Tc=25°C Electrical Characteristics at Ta = 25˚C 5.45 Paramet.

2SK1437 : Ordering number:EN3575 Features · Low ON-state resistance. · Ultrahigh-speed switching. · Converters. N-Channel Silicon MOSFET 2SK1437 Ultrahigh-Speed Switching Applications Package Dimensions unit:mm 2077A [2SK1437] 20.0 3.3 5.0 26.0 6.0 2.0 1.0 20.7 2.0 3.4 1.2 1 23 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Symbol VDSS VGSS ID IDP Allowable Power Dissipation PD Channel Temperature Storage Temperature Tch Tstg 5.45 Conditions PW≤10µs, duty cycle≤1% Tc=25°C Electrical Characteristics at Ta = 25˚C Parameter Symbol Conditions Drain-to-Source Breakdown Voltage V(BR).

2SK1438 : Ordering number:EN3441 Features · Low ON-state resistance. · Ultrahigh-speed switching. N-Channel Silicon MOSFET 2SK1438 Ultrahigh-Speed Switching Applications Package Dimensions unit:mm 2052C [2SK1438] 10.2 3.6 5.1 4.5 1.3 2.7 6.3 15.1 18.0 5.6 1.2 0.8 123 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Symbol VDSS VGSS ID IDP Allowable Power Dissipation PD Channel Temperature Storage Temperature Tch Tstg 2.55 Conditions PW≤10µs, duty cycle≤1% Tc=25°C Electrical Characteristics at Ta = 25˚C 2.55 Parameter Symbol Conditions Drain-to-Source Breakdown Voltage V(BR).

2SK1439 : Ordering number:EN3442 Features · Low ON-state resistance. · Ultrahigh-speed switching. N-Channel Silicon MOSFET 2SK1439 Ultrahigh-Speed Switching Applications Package Dimensions unit:mm 2052C [2SK1439] 10.2 3.6 5.1 4.5 1.3 2.7 6.3 15.1 18.0 5.6 1.2 0.8 123 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Symbol VDSS VGSS ID IDP Allowable Power Dissipation PD Channel Temperature Storage Temperature Tch Tstg 2.55 Conditions PW≤10µs, duty cycle≤1% Tc=25°C Electrical Characteristics at Ta = 25˚C 2.55 Parameter Symbol Conditions Drain-to-Source Breakdown Voltage V(BR).

2SK1439 : ·Drain Current –ID= 3A@ TC=25℃ ·Drain Source Voltage- : VDSS= 450V(Min) ·Fast Switching Speed APPLICATIONS ·Designed for high voltage, high speed power switching ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL ARAMETER VALUE UNIT VDSS VGS ID Ptot Tj Tstg Drain-Source Voltage (VGS=0) Gate-Source Voltage 450 ±30 Drain Current-continuous@ TC=25℃ 3 Total Dissipation@TC=25℃ 50 Max. Operating Junction Temperature 150 Storage Temperature Range -55~150 V V A W ℃ ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Rth j-a Thermal Resistance,Junction to Case 1.75 ℃/W Thermal Resistance,Junction to Ambient 50 ℃/W isc website：www.iscsemi.cn 1 isc & iscsemi is registered tradema.