2SK2398

2SK2390 : www.DataSheet4U.com 2SK2390 Silicon N-Channel MOS FET November 1996 Application High speed power switching Features • • • • • • Low on-resistance High speed switching Low drive current 4 V gate drive device can be driven from 5 V source Suitable for Switching regulator, DC-DC converter Avalanche ratings Outline TO-220CFM D G 12 3 1. Gate 2. Drain 3. Source S www.DataSheet4U.com 2SK2390 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel temperature Storage temperature Notes 1. PW ≤ 10 µs, duty cycle ≤ 1 % 2..

2SK2391 : 2SK2391 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (L2−π−MOSV) 2SK2391 Chopper Regulator, DC−DC Converter and Motor Drive Applications Unit: mm l 4 V gate drive l Low drain−source ON resistance : RDS (ON) = 66 mΩ (typ.) l High forward transfer admittance : |Yfs| = 16 S (typ.) l Low leakage current : IDSS = 100 µA (max) (VDS = 100 V) l Enhancement−mode : Vth = 0.8~2.0 V (VDS = 10 V, ID = 1 mA) Maximum Ratings (Ta = 25°C) Characteristics Drain−source voltage Drain−gate voltage (RGS = 20 kΩ) Gate−source voltage Drain current DC (Note 1) Pulse (Note 1) Drain power dissipation (Tc = 25°C) Single pulse avalanche energy (Note 2) Avalanche current Repetitive avalan.

2SK2393 : 2SK2393 Silicon N-Channel MOS FET Application High voltage / High speed power switching Features • • • • • Low on-resistance, High breakdown voltage High speed switching Low Drive Current No Secondary Breakdown Suitable for Switching regulator, Motor Control Outline TO-3PL D G 1 2 3 S 1. Gate 2. Drain (Flange) 3. Source 2SK2393 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Notes 1. PW ≤ 10 µs, duty cycle ≤ 1 % 2. Value at Tc = 25 °C Symbol VDSS VGSS ID I D(pulse)* I DR Pch* Tch Tstg 2 1 Ratings 1500 ±20 8.

2SK2393 : 2SK2393 Silicon N Channel MOS FET Application High voltage / High speed power switching Features • Low on-resistance, High breakdown voltage • High speed switching • Low drive current • No secondary breakdown • Suitable for switching regulator, motor control Outline RENESAS Package code: PRSS0004ZF-A (Package name: TO-3PL) 1 2 3 REJ03G1010-0300 Rev.3.00 Apr 28, 2009 D 1. Gate G 2. Drain (Flange) 3. Source S Absolute Maximum Ratings Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1 % 2. Value at Tc = 25°C Symbol.

2SK2394 : Ordering number:EN4839A N-Channel Junction Silicon FET 2SK2394 Low-Noise HF Amplifier Applications Applications · AM tuner RF amplifier. · Low-noise amplifier. Features · Largeyfs. · Small Ciss. · Small-sized package permitting 2SK2394-applied sets to be made small slim. · Ultralow noise figure. Specifications Package Dimensions unit:mm 2050A [2SK2394] 0.4 3 0.16 0 to 0.1 0.5 1.5 0.5 2.5 1 0.95 0.95 2 1.9 2.9 0.8 1.1 1 : Source 2 : Drain 3 : Gate SANYO : CP Absolute Maximum Ratings at Ta = 25˚C Parameter Drain-to-Source Voltage Gate-to-Drain Voltage Gate Current Drain Current Allowable Power Dissipation Junction Temperature Storage Temperature Symbol VDSX VGDS IG ID PD Tj Tstg .

2SK2394 : DATA SHEET www.onsemi.com N-Channel JFET 15 V, 6 to 32 mA, 38 mS, CP 2SK2394 Features • Large ⎪yfs⎪ • Small Ciss • Small−Sized Package Permitting 2SK2394−Applied Sets to be Made Small Slim • Ultralow Noise Figure • This is a Pb−Free Device Applications • AM Tuner RF Amplifier • Low−Noise Amplifier ABSOLUTE MAXIMUM RATINGS at TA = 25°C Symbol Parameter Value Unit VDSX Drain−to−Source Voltage 15 V VGDS Gate−to−Drain Voltage −15 V IG Gate Current 10 mA ID Drain Current 50 mA PD Allowable Power Dissipation 200 mW TJ Junction Temperature 150 °C Tstg Storage Temperature −55 to +150 °C Stresses exceeding those listed in the Maximum Ratings table may damage the devi.

2SK2395 : Ordering number:ENN4840 N-Channel Junction Silicon FET 2SK2395 Low-Noise HF Amplifier Applications Applications · AM tuner RF amplifier. · Low-noise amplifier. Features · Large | yfs |. · Small Ciss. · Ultralow noise figure. Package Dimensions unit:mm 2034A [2SK2395] 4.0 2.2 0.4 0.5 0.4 0.4 0.6 1.8 15.0 3.0 123 1.3 1.3 0.7 0.7 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Drain-to-Source Voltage Gate-to-Drain Voltage Gate Current Drain Current Allowable Power Dissipation Junction Temperature Storage Temperature Symbol VDSX VGDS IG ID PD Tj Tstg Electrical Characteristics at Ta = 25˚C 3.0 3.8nom Conditions Parameter Symbol Conditions Gate-to-Drain Breakdown Vo.

2SK2396 : .

2SK2396A : N MOS UHF TV MOS Silicon Power MOS Field Effect Transistor 2SK2396A UHF PO = 100 W, GL = 12 dB, h D = 50 TYP VDD = 30 V, f = 860 MHz, IDQ = 150 mA 2, Pin = 40 dBm f = 470 860 MHz Unit mm TA = 25 D.C. VDS VGS ID PT Rth Tch Tstg 60 7 15 290 0.6 200 65 200 V V A W /W TA = 25 IGSS VGS off IDSS gm PO hD GL VGS = 7 V VDS = 5 V, ID = 50 mA VDS= 60 V VDS = 5 V, ID = 3 A, D ID = 100 mA f = 860 MHz, VDD = 30 V IDQ = 150 mA 2, Pin = 40 dBm f = 860 MHz, VDD = 30 V IDQ = 150 mA 2, Pin = 30 dBm MIN. 1.5 2.0 90 48 10 TYP. 100 50 12 MAX. 1 4 2 mA V mA S W dB P12404JJ1V0DS00 February 1997 N 1 1997 2SK2396A 2 2SK2396A ZIN       VDD = 30 V, IDQ = 150 mA 2, Pin = 40 dBm .

2SK2397-01MR : 2SK2397-01MR FAP-II Series Features High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage VGS = ± 30V Guarantee Avalanche Proof N-channel MOS-FET 800V 2,3Ω 5A 50W Outline Drawing Applications Switching Regulators UPS DC-DC converters General Purpose Power Amplifier Maximum Ratings and Characteristics - Absolute Maximum Ratings (TC=25°C), unless otherwise specified Item Drain-Source-Voltage Drain-Gate-Voltage(RGS=20KΩ) Continous Drain Current Pulsed Drain Current Gate-Source-Voltage Max. Power Dissipation Operating and Storage Temperature Range Symbol V DS V DGR ID I D(puls) V GS PD T ch T stg Rating 800 800 5 20 ±30 50 150 -55 ~ +150 Unit.

2SK2398 : ·Drain Current ID= 45A@ TC=25℃ ·Drain Source Voltage- : VDSS= 60V(Min) ·Fast Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Switching regulators ·UPS ·DC-DC converters ·General purpose power amplifier ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL ARAMETER VALUE UNIT VDSS Drain-Source Voltage (VGS=0) 60 V VGS Gate-Source Voltage ±30 V ID Drain Current-continuous@ TC=25℃ 45 A ID(puls) Pulsed Drain Current 180 A Ptot Total Dissipation@TC=25℃ 100 W Tj Max. Operating Junction Temperature 150 ℃ Tstg Storage Temperature Range ·THERMAL CHARACTERISTICS SYMBOL PARAMETER -55~150 ℃ MAX UNIT Rth j-c Thermal Res.

2SK2399 : 2SK2399 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (L2−π−MOSV) 2SK2399 Chopper Regulator, DC−DC Converter and Motor Drive Applications Unit: mm l 4 V gate drive l Low drain−source ON resistance : RDS (ON) = 0.17 Ω (typ.) l High forward transfer admittance : |Yfs| = 4.5 S (typ.) l Low leakage current : IDSS = 100 µA (max) (VDS = 100 V) l Enhancement−mode : Vth = 0.8~2.0 V (VDS = 10 V, ID = 1 mA) Maximum Ratings (Ta = 25°C) Characteristics Drain−source voltage Drain−gate voltage (RGS = 20 kΩ) Gate−source voltage Drain current DC (Note 1) Pulse (Note 1) Drain power dissipation (Tc = 25°C) Single pulse avalanche energy (Note 2) Avalanche current Repetitive avala.