Part Number | 2SK2517-01L |
Manufacturer | Fuji Electric |
Title | N-channel MOS-FET |
Description | 2SK2517-01L,S F-III Series Features High Current Low On-Resistance No Secondary Breakdown Low Driving Power High Forward Transconductance N-cha... |
Features |
High Current Low On-Resistance No Secondary Breakdown Low Driving Power High Forward Transconductance
N-channel MOS-FET
60V
20mΩ
50A
80W
Outline Drawing
Applications
- Motor Control - General Purpose Power Amplifier - DC-DC converters
Maximum Ratings and Characteristics
- Absolute Maxim...
|
File Size | 191.39KB |
Datasheet |
|
2SK2517-01S : 2SK2517-01L,S F-III Series Features High Current Low On-Resistance No Secondary Breakdown Low Driving Power High Forward Transconductance N-channel MOS-FET 60V 20mΩ 50A 80W Outline Drawing Applications - Motor Control - General Purpose Power Amplifier - DC-DC converters Maximum Ratings and Characteristics - Absolute Maximum Ratings (TC=25°C), unless otherwise specified Item Drain-Source-Voltage Drain-Gate-Voltage (RGS=20KΩ) Continous Drain Current Pulsed Drain Current Gate-Source-Voltage Max. Power Dissipation Operating and Storage Temperature Range Symbol V DS V DGR ID I D(puls) V GS PD T ch T stg Rating 60 60 50 200 ±20 80 150 -55 ~ +150 Unit V V A A V W °C °C Equivalent .