2SK2553

2SK2550 : 2SK2550 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSV) 2SK2550 Chopper Regulator, DC−DC Converter and Motor Drive Applications Unit: mm z Low drain−source ON resistance : RDS (ON) = 24 mΩ (typ.) z High forward transfer admittance : |Yfs| = 27 S (typ.) z Low leakage current : IDSS = 100 μA (max) (VDS = 50 V) z Enhancement mode : Vth = 1.5~3.5 V (VDS = 10 V, ID = 1 mA) Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Drain−source voltage Drain−gate voltage (RGS = 20 kΩ) Gate−source voltage Drain current DC (Note 1) Pulse (Note 1) Drain power dissipation (Tc = 25°C) Single pulse avalanche energy (Note 2) Avalanche current Repetiti.

2SK2551 : 2SK2551 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSV) 2SK2551 Chopper Regulator, DC−DC Converter and Motor Drive Applications Unit: mm z Low drain−source ON resistance : RDS (ON) = 7.2 mΩ (typ.) z High forward transfer admittance : |Yfs| = 50 S (typ.) z Low leakage current : IDSS = 100 μA (max) (VDS = 50 V) z Enhancement mode : Vth = 1.5 to 3.0 V (VDS = 10 V, ID = 1 mA) Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Drain−source voltage Drain−gate voltage (RGS = 20 kΩ) Gate−source voltage Drain current DC (Note 1) Pulse (Note 1) Drain power dissipation (Tc = 25°C) Single pulse avalanche energy (Note 2) Avalanche current Re.

2SK2552 : The 2SK2552 is suitable for converter of ECM. FEATURES • Compact package • High forward transfer admittance 1000 µS TYP. (IDSS = 100 µA) 1600 µS TYP. (IDSS = 200 µA) • Includes diode and high resistance at G - S ORDERING INFORMATION PART NUMBER 2SK2552 PACKAGE SC-75 (USM) ABSOLUTE MAXIMUM RATINGS (TA = 25°C) Drain to Source Voltage Note1 VDSX 20 Gate to Drain Voltage VGDO –20 Drain Current ID 10 Gate Current Total Power Dissipation Note2 IG 10 PT 200 Junction Temperature Tj 125 Storage Temperature Tstg –55 to +125 V V mA mA mW °C °C 1.6 ± 0.1 0.8 ± 0.1 PACKAGE DRAWING (Unit: mm) 0.3 +0.1 –0 0.15 +0.1 –0.05 3 2 0.2 +0.1 –0 1 0.5 0.5 1.0 1.6 ± 0.1 0 to 0.1 0.6 0.

2SK2552B : The 2SK2552B is suitable for converter of ECM. General-purpose product. PACKAGE DRAWING (Unit: mm) 0.3 +0.1 –0 0.15 +0.1 –0.05 1.6 ±0.1 • Low noise: −108.5 dB TYP. (VDD = 2.0 V, C = 5 pF, RL = 2.2 kΩ) • Especially suitable for audio and telephone • Small package: SC-75 (USM) 0.8 ±0.1 FEATURES 3 0 to 0.1 2 0.2 +0.1 –0 0.5 TYP. 0.5 TYP. 1 0.6 TYP. 0.75 ±0.05 1.0 TYP. 1.6 ±0.1 ORDERING INFORMATION PART NUMBER 2SK2552B PACKAGE SC-75 (USM) ABSOLUTE MAXIMUM RATINGS (TA = 25°C) Drain to Source Voltage (VGS = −1.0 V) Gate to Drain Voltage Drain Current Gate Current Total Power Dissipation Junction Temperature Storage Temperature VDSX VGDO ID IG PT Tj Tstg 20 −20 10 10 100 125 −55 to +125 .

2SK2552C : The 2SK2552C contains a diode and high resistivity between its gates and sources, for achieving short stability time during power-on. In addition, because of its compact 1.6 ±0.1 0.8 ±0.1 PACKAGE DRAWING (Unit: mm) 0.3 +0.1 –0 0.15 +0.1 –0.05 package and low noise, the 2SK2552C is especially suitable for compact ECMs for audio or mobile devices such as cellphones. 3 0 to 0.1 2 0.2 +0.1 –0 0.5 TYP. 0.5 TYP. 1 0.6 TYP. 0.75 ±0.05 FEATURES • Low noise: −108.5 dB TYP. (VDD = 2.0 V, C = 5 pF, RL = 2.2 kΩ) • Containing a diode and high resistivity, short stability time is achieved during power-on. • Small package: SC-75 (USM) 1.0 TYP. 1.6 ±0.1 ORDERING INFORMATION PART NUMBER 2SK2552C PACK.

2SK2553L : 2SK2553(L), 2SK2553(S) Silicon N Channel MOS FET High Speed Power Switching ADE-208-357H (Z) 9th. Edition February 1999 Application High speed power switching Features • • • • Low on-resistance R DS(on) = 7 mΩ typ. High speed switching 4 V gate drive device can be driven from 5 V source Outline LDPAK 4 4 1 2 1 D G 2 3 3 S 1. Gate 2. Drain 3. Source 4. Drain 2SK2553(L), 2SK2553(S) Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel temperature Storage temperature Notes 1. PW ≤ 10 µs, duty cycle ≤ 1 % 2. Value at.

2SK2553S : 2SK2553(L), 2SK2553(S) Silicon N Channel MOS FET High Speed Power Switching ADE-208-357H (Z) 9th. Edition February 1999 Application High speed power switching Features • • • • Low on-resistance R DS(on) = 7 mΩ typ. High speed switching 4 V gate drive device can be driven from 5 V source Outline LDPAK 4 4 1 2 1 D G 2 3 3 S 1. Gate 2. Drain 3. Source 4. Drain 2SK2553(L), 2SK2553(S) Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel temperature Storage temperature Notes 1. PW ≤ 10 µs, duty cycle ≤ 1 % 2. Value at.

2SK2554 : 2SK2554 Silicon N-Channel MOS FET ADE-208-359 D 5th. Edition Application High speed power switching Features • • • • Low on-resistance R DS(on) = 4.5 mΩ typ. High speed switching 4 V gate drive device can be driven from 5 V source Outline TO-3P D G 1 2 3 1. Gate 2. Drain (Flange) 3. Source S 2SK2554 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel temperature Storage temperature Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1 % 2. Value at Tc = 25°C 3. Value at Tch = 25°C, Rg ≥ 50 Ω Symbol VDSS VGSS ID I D(pulse)* I DR*.

2SK2554 : 2SK2554 Silicon N Channel MOS FET Application High speed power switching Features • Low on-resistance • RDS(on) = 4.5 mΩ typ. • High speed switching • 4 V gate drive device can be driven from 5 V source Outline REJ03G1016-0600 (Previous: ADE-208-359D) Rev.6.00 Sep 07, 2005 RENESAS Package code: PRSS0004ZE-A (Package name: TO-3P) D 1. Gate G 2. Drain (Flange) 3. Source 1 2 3 S Rev.6.00 Sep 07, 2005 page 1 of 7 2SK2554 Absolute Maximum Ratings Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel temperature Storage temperature Notes: 1. PW ≤ 10 µs, dut.

2SK2555 : Ordering number:ENN5316A Features · Low ON-resistance. · Ultrahigh-speed switching. · 4V drive. N-Channel Silicon MOSFET 2SK2555 DC/DC Converter Applications Package Dimensions unit:mm 2083B [2SK2555] 6.5 5.0 2.3 4 0.5 5.5 1.5 7.0 unit:mm 2092B 0.85 0.7 0.6 12 3 2.3 2.3 0.8 1.6 7.5 1.2 0.5 1 : Gate 2 : Drain 3 : Source 4 : Drain SANYO : TP [2SK2555] 6.5 2.3 5.0 0.5 4 0.8 5.5 1.5 2.5 7.0 1.2 0.85 1 0.6 2 3 2.3 2.3 0.5 1.2 0 to 0.2 1 : Gate 2 : Drain 3 : Source 4 : Drain SANYO : TP-FA Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, air.

2SK2556 : 2SK2556 2SK2556 No. µ  µ µ Ω Ω 0.1 1.5 1.8max 4.4 0.3 6.0 85 1 5.0 4 0.595 1.27 0.43 0.2 2SK2556 VIN 10V 0V VIN PW=10µs D.C. 1% VDD=15V ID=6A RL=2.5Ω D VOUT G P.G 50Ω 2SK2556 S µ m m ° ° .

2SK2557 : 2SK2557 2SK2557 No. µ  µ µ Ω Ω 0.1 1.5 1.8max 4.4 0.3 6.0 85 1 5.0 4 0.595 1.27 0.43 0.2 This datasheet has been downloaded from http://www.digchip.com at this page 2SK2557 VIN 10V 0V VIN PW=10µs D.C. 1% VDD=15V ID=7A RL=2.1Ω D VOUT G P.G 50Ω 2SK2557 S µ m m ° ° .

2SK2559 : SHINDENGEN VZ Series Power MOSFET N-Channel Enhancement type 2SK2559 ( F10F20VZ ) 200V 10A FEATURES •œ Input capacitance (Ciss) is small. Especially, input capacitance at 0 biass is small. •œ The static Rds(on) is small. •œ The switching time is fast. APPLICATION •œ DC/DC converters OUTLINE DIMENSIONS Case : FTO-220 (Unit : mm) •œ Power supplies of DC 12-24V input •œ Product related to Integrated Service Digital Network RATINGS •œAbsolute Maximum Ratings • Tc i = 25•Ž•j Item Symbol Conditions Ratings Storage Temperature Tstg -55•`150 Channel Temperature Tch 150 DSS Drain-Source Voltage V 200 Gate-Source Voltage VGSS •}30 Continuous Drain Current• DC•j i ID 10 Continuous Drain Current• Pe.