2SK2796

2SK2792 : Transistors Switching (600V, 4A) 2SK2792 FFeatures 1) Low on-resistance. 2) Fast switching speed. 3) Wide SOA (safe operating area). 4) Gate-source voltage (VGSS) guaranteed to be ±30V. 5) Easily designed drive circuits. 6) Easy to parallel. FStructure Silicon N-channel MOSFET FExternal dimensions (Units: mm) FAbsolute maximum ratings (Ta = 25_C) FPackaging specifications 158 Transistors FElectrical characteristics (Ta = 25_C) 2SK2792 FElectrical characteristic curves 159 Transistors 2SK2792 160 Transistors 2SK2792 FSwitching characteristics Fmeasurement circuit 161 Appendix Notes No technical content pages of this document may be reproduced in any form or transmitted by any.

2SK2793 : Transistors Switching (500V, 5A) 2SK2793 FFeatures 1) Low on-resistance. 2) Fast switching speed. 3) Wide SOA (safe operating area). 4) Gate-source voltage (VGSS) guaranteed to be ±30V. 5) Easily designed drive circuits. 6) Easy to parallel. FStructure Silicon N-channel MOSFET FExternal dimensions (Units: mm) FAbsolute maximum ratings (Ta = 25_C) FPackaging specifications 162 Transistors FElectrical characteristics (Ta = 25_C) 2SK2793 FElectrical characteristic curves 163 Transistors 2SK2793 164 Transistors 2SK2793 FSwitching characteristics Fmeasurement circuit 165 .

2SK2796L : 2SK2796(L), 2SK2796(S) Silicon N Channel MOS FET High Speed Power Switching ADE-208-534C (Z) 4th. Edition Jun 1998 Features • Low on-resistance R DS(on) = 0.12Ω typ. • 4V gate drive devices. • High speed switching Outline DPAK |1 4 4 D 1 2 G 3 S 1 2 3 1. Gate 2. Drain 3. Source 4. Drain 2SK2796(L), 2SK2796(S) Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel temperature Storage temperature Note: Symbol VDSS VGSS ID I D(pulse) I DR I AP Note3 Note3 Note2 Note1 Ratings 60 ±20 5 20 5 5 2.14 20 150 –55 to +150 U.

2SK2796L : ·DC/DC Converters ·DC/AC Inverters ·Motor Drives ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 60 V VGS Gate-Source Voltage-Continuous ±20 V ID Drain Current-Continuous 16.9 A IDM Drain Current-Single Pluse 25 A PD Total Dissipation @TC=25℃ 41.7 W TJ Max. Operating Junction Temperature -55~150 ℃ Tstg Storage Temperature -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance, Junction to Case 3.0 ℃/W isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc N-Channel MOSFET Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CON.

2SK2796S : 2SK2796(L), 2SK2796(S) Silicon N Channel MOS FET High Speed Power Switching ADE-208-534C (Z) 4th. Edition Jun 1998 Features • Low on-resistance R DS(on) = 0.12Ω typ. • 4V gate drive devices. • High speed switching Outline DPAK |1 4 4 D 1 2 G 3 S 1 2 3 1. Gate 2. Drain 3. Source 4. Drain 2SK2796(L), 2SK2796(S) Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel temperature Storage temperature Note: Symbol VDSS VGSS ID I D(pulse) I DR I AP Note3 Note3 Note2 Note1 Ratings 60 ±20 5 20 5 5 2.14 20 150 –55 to +150 U.

2SK2798 : SHINDENGEN VX-2 Series Power MOSFET N-Channel Enhancement type 2SK2798 (F6F35VX2) 350V 6A FEATURES •œ Input capacitance (Ciss) is small. Especially, input capacitance at 0 biass is small. •œ The static Rds(on) is small. •œ The switching time is fast. APPLICATION •œ Switching power supply of AC 100V input OUTLINE DIMENSIONS Case : E-pack Case : FTO-220 (Unit : mm) •œ High voltage power supply •œ Inverter RATINGS •œAbsolute Maximum Ratings • Tc i = 25•Ž•j Item Symbol Conditions Storage Temperature Tstg Channel Temperature Tch Drain-Source Voltage VDSS Gate-Source Voltage VGSS Continuous Drain Current• DC•j i ID Continuous Drain Current• Peak) i IDP Continuous Source Current• DC•j i IS PT.

2SK2799 : SHINDENGEN VX-2 Series Power MOSFET N-Channel Enhancement type 2SK2799 (F10F35VX2) 350V 10A FEATURES •œ Input capacitance (Ciss) is small. Especially, input capacitance at 0 biass is small. •œ The static Rds(on) is small. •œ The switching time is fast. APPLICATION •œ Switching power supply of AC 100V input OUTLINE DIMENSIONS Case : E-pack Case : FTO-220 (Unit : mm) •œ High voltage power supply •œ Inverter RATINGS •œAbsolute Maximum Ratings • Tc i = 25•Ž•j Item Symbol Conditions Storage Temperature Tstg Channel Temperature Tch Drain-Source Voltage VDSS Gate-Source Voltage VGSS Continuous Drain Current• DC•j i ID Continuous Drain Current• Peak) i IDP Continuous Source Current• DC•j i IS .