2SK3044

2SK304 : Silicon N Channel Junction FETs LH03 series of products interconvertible 2SK304 2SK304 D Symbol Applications For charge sensor, meter amplifier circuit, rheostat , chopper and gain controller for AGC, electronic switch. Electrical characteristics (Ta=25℃) SG Packag 1-Source 2-Gate 3-Drain TO-92 or TO-92s Parameter Drain to Source Voltage Gate to Drain ( Source) Voltage Gate to Source Cut-off Voltage Gate to Source Reverse Current Saturation Drain Current Forward transfer admittance Symbl BVDS VGD(S) VGS(off) IGSS IDSS |Yfs| Conditions IDS= 1uA IGS= -1uA VDS=10V IDS=1uA VDS=0VVGS=-20V VDS=10V VGS=0V VDS=10V VGS=0V f=1KHz min 30 -30 -0.3 0.6 2.5 typ max unit V V -2.5 V -1.0 nA 12 mA .

2SK304 : .

2SK3042 : Power F-MOS FETs 2SK3042 Silicon N-Channel Power F-MOS FET s Features q Avalanche energy capacity guaranteed: EAS 45mJ q High-speed switching: tf = 30ns q No secondary breakdown unit: mm 9.9±0.3 4.6±0.2 2.9±0.2 s Applications q Contactless relay q Diving circuit for a solenoid q Driving circuit for a motor q Control equipment q Switching power supply 15.0±0.5 φ3.2±0.1 13.7±0.2 4.2±0.2 1.4±0.2 1.6±0.2 0.8±0.1 3.0±0.5 2.6±0.1 s Absolute Maximum Ratings (TC = 25°C) Parameter Drain to Source breakdown voltage Gate to Source voltage Drain current DC Pulse Symbol VDSS VGSS ID IDP EAS* PD Tch Tstg Ratings 250 ±20 ±7 ±14 45 35 2 150 −55 to +150 Unit V V A A mJ W °C °C 0.55±0.15 1 2 2.5.

2SK3043 : Power F-MOS FETs 2SK3043 Silicon N-Channel Power F-MOS FET s Features q Avalanche energy capacity guaranteed: EAS 100mJ q VGSS = ±30V guaranteed q High-speed switching: tf = 35ns q No secondary breakdown unit: mm 9.9±0.3 4.6±0.2 2.9±0.2 s Applications q Contactless relay q Diving circuit for a solenoid q Driving circuit for a motor q Control equipment q Switching power supply 15.0±0.5 φ3.2±0.1 13.7±0.2 4.2±0.2 1.4±0.2 1.6±0.2 0.8±0.1 3.0±0.5 2.6±0.1 0.55±0.15 s Absolute Maximum Ratings (TC = 25°C) Parameter Drain to Source breakdown voltage Gate to Source voltage Drain current DC Pulse Symbol VDSS VGSS ID IDP EAS* PD Tch Tstg Ratings 450 ±30 ±5 ±10 100 35 2 150 −55 to +150 Unit V.

2SK3045 : Power F-MOS FETs 2SK3045 Silicon N-Channel Power F-MOS FET s Features q Avalanche energy capacity guaranteed: EAS 15.6mJ q VGSS = ±30V guaranteed q High-speed switching: tf = 35ns q No secondary breakdown unit: mm 9.9±0.3 4.6±0.2 2.9±0.2 s Applications q Contactless relay q Diving circuit for a solenoid q Driving circuit for a motor q Control equipment q Switching power supply 15.0±0.5 φ3.2±0.1 13.7±0.2 4.2±0.2 1.4±0.2 1.6±0.2 0.8±0.1 3.0±0.5 2.6±0.1 0.55±0.15 s Absolute Maximum Ratings (TC = 25°C) Parameter Drain to Source breakdown voltage Gate to Source voltage Drain current DC Pulse Symbol VDSS VGSS ID IDP EAS* PD Tch Tstg Ratings 500 ±30 ±2.5 ±10 15.6 30 2 150 −55 to +150 Un.

2SK3046 : Power F-MOS FETs 2SK3046 Silicon N-Channel Power F-MOS FET s Features q Avalanche energy capacity guaranteed: EAS 130mJ q VGSS = ±30V guaranteed q High-speed switching: tf = 60ns q No secondary breakdown unit: mm 9.9±0.3 4.6±0.2 2.9±0.2 s Applications q Contactless relay q Diving circuit for a solenoid q Driving circuit for a motor q Control equipment q Switching power supply 15.0±0.5 φ3.2±0.1 13.7±0.2 4.2±0.2 1.4±0.2 1.6±0.2 0.8±0.1 3.0±0.5 2.6±0.1 0.55±0.15 s Absolute Maximum Ratings (TC = 25°C) Parameter Drain to Source breakdown voltage Gate to Source voltage Drain current DC Pulse Symbol VDSS VGSS ID IDP EAS* PD Tch Tstg Ratings 500 ±30 ±7 ±14 130 40 2 150 −55 to +150 Unit V.

2SK3047 : Power F-MOS FETs 2SK3047 Silicon N-Channel Power F-MOS FET s Features q Avalanche energy capacity guaranteed: EAS 15mJ q VGSS = ±30V guaranteed q High-speed switching: tf = 25ns q No secondary breakdown unit: mm 9.9±0.3 4.6±0.2 2.9±0.2 s Applications q Contactless relay q Diving circuit for a solenoid q Driving circuit for a motor q Control equipment q Switching power supply 15.0±0.5 φ3.2±0.1 13.7±0.2 4.2±0.2 1.4±0.2 1.6±0.2 0.8±0.1 3.0±0.5 2.6±0.1 0.55±0.15 s Absolute Maximum Ratings (TC = 25°C) Parameter Drain to Source breakdown voltage Gate to Source voltage Drain current DC Pulse Symbol VDSS VGSS ID IDP EAS* PD Tch Tstg Ratings 800 ±30 ±2 ±4 15 30 2 150 −55 to +150 Unit V V .

2SK3048 : Power F-MOS FETs 2SK3048 Silicon N-Channel Power F-MOS FET s Features q Avalanche energy capacity guaranteed q High-speed switching q Low ON-resistance q No secondary breakdown unit: mm 9.9±0.3 4.6±0.2 2.9±0.2 s Applications q Contactless relay q Diving circuit for a solenoid q Driving circuit for a motor q Control equipment q Switching power supply 15.0±0.5 φ3.2±0.1 13.7±0.2 4.2±0.2 1.4±0.2 1.6±0.2 0.8±0.1 3.0±0.5 2.6±0.1 0.55±0.15 s Absolute Maximum Ratings (TC = 25°C) Parameter Drain to Source breakdown voltage Gate to Source voltage Drain current DC Pulse Symbol VDSS VGSS ID IDP EAS* PD Tch Tstg Ratings 600 ±30 ±3 ±6 22.5 35 2 150 −55 to +150 Unit V V A A mJ W °C °C 1 2 2.54±0.

2SK3049 : Power F-MOS FETs 2SK3049 Silicon N-Channel Power F-MOS FET s Features q Avalanche energy capacity guaranteed q High-speed switching q Low ON-resistance q No secondary breakdown unit: mm 9.9±0.3 4.6±0.2 2.9±0.2 s Applications q Contactless relay q Diving circuit for a solenoid q Driving circuit for a motor q Control equipment q Switching power supply 15.0±0.5 φ3.2±0.1 13.7±0.2 4.2±0.2 1.4±0.2 1.6±0.2 0.8±0.1 3.0±0.5 2.6±0.1 0.55±0.15 s Absolute Maximum Ratings (TC = 25°C) Parameter Drain to Source breakdown voltage Gate to Source voltage Drain current DC Pulse Symbol VDSS VGSS ID IDP EAS* PD Tch Tstg Ratings 600 ±30 ±5 ±10 62.5 40 2 150 −55 to +150 Unit V V A A mJ W °C °C 1 2 2.54±.