2SK3056

2SK3050 : 2SK3050 Transistors Small switching (600V, 2A) 2SK3050 zFeatures 1) Low on-resistance. 2) Fast switching speed. 3) Wide SOA (safe operating area). 4) Gate-source voltage (VGSS) guaranteed to be ±30V. 5) Easily designed drive circuits. 6) Easy to use in parallel. zExternal dimensions (Unit : mm) 1.5±0.3 6.5±0.2 0.2 5.1 + −0.1 C0.5 0.2 2.3 + −0.1 0.5±0.1 0.75 0.9 0.65±0.1 0.5±0.1 2.3±0.2 2.3±0.2 1.0±0.2 zStructure Silicon N-channel MOSFET zAbsolute maximum ratings (Ta=25°C) Parameter Drain-source voltage Gate-source voltage Drain current Reverse drain current Continuous Pulsed Continuous Pulsed Symbol VDSS VGSS ID IDP∗ IDR IDRP∗ PD Total power dissipation (Tc=25°C) Channel temperature S.

2SK3051 : 2SK3051 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSV) 2SK3051 Chopper Regulator DC−DC Converter, and Motor Drive Applications Unit: mm z Low drain−source ON resistance : RDS (ON) = 24 mΩ (typ.) z High forward transfer admittance : |Yfs| = 27 S (typ.) z Low leakage current : IDSS = 100 μA (max) (VDS = 50 V) z Enhancement mode : Vth = 1.5~3.0 V (VDS = 10 V, ID = 1 mA) Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Drain−source voltage Drain−gate voltage (RGS = 20 kΩ) Gate−source voltage Drain current DC (Note 1) Pulse (Note 1) Drain power dissipation (Tc = 25°C) Single pulse avalanche energy (Note 2) Avalanche current Repetiti.

2SK3053 : The 2SK3053 is N-Channel MOS Field Effect Transistor designed for high current switching applications in consumer instruments. ORDERING INFORMATION PART NUMBER 2SK3053 PACKAGE Isolated TO-220 FEATURES • Low On-State Resistance RDS(on)1 = 45 mΩ MAX. (VGS = 10 V, ID = 13 A) RDS(on)2 = 70 mΩ MAX. (VGS = 4.0 V, ID = 13 A) • Low Ciss : Ciss = 790 pF TYP. • Built-in Gate Protection Diode • Isolated TO-220 package (Isolated TO-220) ABSOLUTE MAXIMUM RATINGS (TA = 25 °C) Drain to Source Voltage Gate to Source Voltage Gate to Source Voltage Drain Current (DC) Drain Current (Pulse) Note1 VDSS VGSS(AC) VGSS(DC) ID(DC) ID(pulse) PT PT Tch Tstg Note2 Note2 60 ±20 +20, −10 ±25 ±75 30 2.0 150 –55 to +1.

2SK3054 : The 2SK3054 is a switching device which can be driven directly by a 2.5-V power source. The 2SK3054 has excellent switching characteristics, and is suitable for use as a high-speed switching device in digital circuits. ORDERING INFORMATION PART NUMBER 2SK3054 PACKAGE SC-70 FEATURES • Can be driven by a 2.5-V power source • Low gate cut-off voltage ABSOLUTE MAXIMUM RATINGS (TA = 25°C) Drain to Source Voltage (VGS= 0 V) Gate to Source Voltage (VDS= 0 V) Drain Current (DC) Drain Current (pulse) Note VDSS VGSS ID(DC) ID(pulse) PT Tch Tstg 50 ±7 ±0.1 ±0.2 150 150 –55 to +150 V V A A mW °C °C Total Power Dissipation Channel Temperature Storage Temperature Note PW ≤ 10 ms, Duty cycle ≤ 50 % .

2SK3054C : The 2SK3054C, N-channel vertical type MOSFET designed for general-purpose switch, is a device which can be driven directly by a 4.5 V power source. Features  Directly driven by a 4.5 V power source.  Low on-state resistance RDS(on)1 = 2.7  MAX. (VGS = 10 V, ID = 100 mA) RDS(on)2 = 3.2  MAX. (VGS = 4.5 V, ID = 50 mA) Ordering Information Part Number Lead Plating Packing Package 2SK3054C-T1B-A/AT -A:Sn-Bi , -AT:Pure Sn 3000p/Reel SC-70 (3pSSP) Remark "-A/AT" indicates Pb-free. This product does not contain Pb in external electrode and other parts. Marking XM Absolute Maximum Ratings (TA = 25°C) Drain to Source Voltage (VGS = 0 V) Gate to Source Voltage (VDS = 0 V) Drain Curre.

2SK3055 : This product is N-Channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Low On-State Resistance RDS(on)1 = 34 mΩ MAX. (VGS = 10 V, ID = 15 A) RDS(on)2 = 50 mΩ MAX. (VGS = 4.0 V, ID = 15 A) • Low Ciss : Ciss = 920 pF TYP. • Built-in Gate Protection Diode • Isolated TO-220 package ABSOLUTE MAXIMUM RATINGS (TA = 25 °C) Drain to Source Voltage Gate to Source Voltage Gate to Source Voltage Drain Current (DC) Drain Current (Pulse) Note1 VDSS VGSS(AC) VGSS(DC) ID(DC) ID(pulse) PT PT Tch Tstg Note2 Note2 60 ±20 +20, −10 ±30 ±100 25 2.0 150 –55 to +150 15 22.5 V V V A A W W °C °C A mJ Total Power Dissipation (TC = 25°C) Total Power Dissipation (TA = 25.

2SK3057 : This product is N-Channel MOS Field Effect Transistor designed for high current switching application. FEATURES • Low on-state resistance RDS(on)1 = 17 mΩ MAX. (VGS = 10 V, ID = 23 A) RDS(on)2 = 27 mΩ MAX. (VGS = 4 V, ID = 23 A) • Low Ciss: Ciss = 2100 pF TYP. • Built-in gate protection diode • Isolated TO-220 package ABSOLUTE MAXIMUM RATINGS (TA = 25°C) Drain to Source Voltage Gate to Source Voltage Gate to Source Voltage Drain Current (DC) Drain Current (pulse) Note1 VDSS VGSS(AC) VGSS(DC) ID(DC) ID(pulse) PT PT Tch Tstg Note2 Note2 60 ±20 +20, –10 ±45 ±150 30 2.0 150 –55 to +150 22.5 50.6 V V V A A W W °C °C A mJ Total Power Dissipation (Tc = 25°C) Total Power Dissipation (Ta = 25°C.

2SK3058 : This product is N-Channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Super Low On-State Resistance RDS(on)1 = 17 mΩ MAX. (VGS = 10 V, ID = 28 A) RDS(on)2 = 27 mΩ MAX. (VGS = 4.0 V, ID = 28 A) • Low Ciss : Ciss = 2100 pF (TYP.) • Built-in Gate Protection Diode ABSOLUTE MAXIMUM RATINGS (TA = 25 °C) Drain to Source Voltage (VGS = 0) Gate to Source Voltage (VDS = 0) Gate to Source Voltage (VDS = 0) Drain Current (DC) Drain Current (Pulse) Note1 VDSS VGSS(AC) VGSS(DC) ID(DC) ID(pulse) PT PT Tch Tstg 60 ±20 +20, –10 ±55 ±165 58 1.5 150 –55 to + 150 27.5 75.6 V V V A A W W °C °C A mJ Total Power Dissipation (TC = 25°C) Total Power Dissipation (TA .