| Part Number | 2SC5420 |
| Manufacturer | Sanyo Semicon Device |
| Title | NPN TRANSISTOR |
| Description | Ordering number : EN5762 NPN Triple Diffused Planar Silicon Transistor 2SC5420 Inverter Lighting Applications Features • High breakdown voltage... |
| Features |
• High breakdown voltage (VCBO=1000V). • High reliability (Adoption of HVP process). • Adoption of MBIT process. Package Dimensions unit: mm 2069B-SMP-FD [2SC5420] 10.2 4.5 1.3 8.8 1.2 0.8 1 2 3 2.7 0.4 3.0 Specifications Absolute Maximum Ratings at Ta=25°C Parameter Collector-to-Base Voltage Co... |
| File Size | 41.94KB |
| Datasheet |
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2SC5421 : 2SC5421 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED MESA TYPE 2SC5421 HORIZONTAL DEFLECTION OUTPUT FOR HIGH RESOLUTION DISPLAY, COLOR TV HIGH SPEED SWITCHING APPLICATIONS l High Voltage l Low Saturation Voltage : VCBO = 1500 V : VCE (sat) = 3 V (Max.) Unit: mm MAXIMUM RATINGS (Tc = 25°C) CHARACTERISTIC Collector−Base Voltage Collector−Emitter Voltage Emitter−Base Voltage Collector Current Base Current Collector Power Dissipation Junction Temperature Storage Temperature Range DC Pulse SYMBOL VCBO VCEO VEBO IC ICP IB PC Tj Tstg RATING 1500 600 5 15 30 7.5 180 150 −55~150 UNIT V V V A A W °C °C JEDEC JEITA TOSHIBA ― ― 2-21F2A Weight: 9.75 g (typ.) ELECTRICAL CHARACTERISTICS (Tc = 25°C).
2SC5422 : 2SC5422 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED MESA TYPE 2SC5422 HORIZONTAL DEFLECTION OUTPUT FOR HIGH RESOLUTION DISPLAY, COLOR TV HIGH SPEED SWITCHING APPLICATIONS l High Voltage l Low Saturation Voltage l High Speed : VCBO = 1700 V : VCE (sat) = 3 V (Max.) : tf = 0.15 µs (Typ.) Unit: mm MAXIMUM RATINGS (Tc = 25°C) CHARACTERISTIC SYM Collector−Base Voltage Collector−Emitter Voltage Emitter−Base Voltage Collector Current Base Current Collector Power Dissipation Junction Temperature Storage Temperature Range DC I Pulse BOL VCBO VCEO VEBO C RATING 1700 V 600 5 15 30 7.5 A 200 150 ° −55~150 ° UNIT V V A ICP IB PC Tj Tstg JEDEC JEITA ― ― 2-21F2A W C C TOSHIBA Weight: 9.75 g (.
2SC5423 : Power Transistors 2SC5423 Silicon NPN triple diffusion mesa type For horizontal deflection output 15.5±0.5 4.5 Unit: mm q q q High breakdown voltage, and high reliability through the use of a glass passivation layer High-speed switching Wide area of safe operation (ASO) (TC=25˚C) Ratings 1700 1700 600 5 30 15 10 100 3.5 150 –55 to +150 Unit V V V V A A A W ˚C ˚C 10.0 s Features φ3.2±0.1 5° 26.5±0.5 3.0±0.3 5° 23.4 22.0±0.5 2.0 1.2 5° 18.6±0.5 5° 5° s Absolute Maximum Ratings Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Base current Collector power TC=25°C dissipation Ta=25°C Junction temperature.