| Part Number | 2SC5458 |
| Manufacturer | Toshiba Semiconductor |
| Title | NPN TRANSISTOR |
| Description | TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC5458 High Voltage Switching Applications Switching Regulator Applications DC-DC Converter A... |
| Features |
ctor-emitter breakdown voltage
DC current gain
Collector emitter saturation voltage Base-emitter saturation voltage
Symbol
Test Condition
ICBO IEBO V (BR) CBO V (BR) CEO
hFE
VCE (sat) VBE (sat)
VCB = 480 V, IE = 0 VEB = 7 V, IC = 0 IC = 1 mA, IE = 0 IC = 10 mA, IB = 0 VCE = 5 V, IC = 1 mA VCE = ...
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| File Size | 189.87KB |
| Datasheet |
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2SC5450 : ·High Breakdown Voltage- : VCBO= 1600V (Min) ·High Speed Switching ·High Reliability ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Color TV horizontal deflection output ·Color display horizontal deflection output ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1600 V VCEO Collector-Emitter Voltage 800 V VEBO Emitter-Base Voltage 6 V IC Collector Current- Continuous 10 A ICP Collector Current-Pulse PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 25 A 70 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ 2SC5450 isc website：www.iscsemi.com 1 isc & i.
2SC5450 : Ordering number:EN5955 NPN Triple Diffused Planar Silicon Transistor 2SC5450 Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications Features · High speed. · High breakdown voltage (VCBO=1600V). · High reliability (Adoption of HVP process). · Adoption of MBIT process. www.DataSheet4U.com Package Dimensions unit:mm 2039D [2SC5450] 3.4 16.0 5.6 3.1 5.0 8.0 21.0 22.0 20.4 2.8 2.0 1.0 4.0 2.0 0.6 1 2 3 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO V.
2SC5451 : Ordering number:EN5956 NPN Triple Diffused Planar Silicon Transistor 2SC5451 Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications Features · High speed. · High breakdown voltage (VCBO=1600V). · High reliability (Adoption of HVP process). · Adoption of MBIT process. a t a S h e e t 4 U . c o m Package Dimensions unit:mm 2039D [2SC5451] 3.4 16.0 5.6 3.1 w w w . D 5.0 8.0 21.0 22.0 20.4 2.8 2.0 1.0 4.0 2.0 0.6 1 2 3 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature.
2SC5452 : Ordering number:EN5957A NPN Triple Diffused Planar Silicon Transistor 2SC5452 Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications Features · High speed. · High breakdown voltage (VCBO=1600V). · High reliability (Adoption of HVP process). · Adoption of MBIT process. a t a S h e e t 4 U . c o m Package Dimensions unit:mm 2039D [2SC5452] 3.4 16.0 5.0 8.0 5.6 3.1 w w w . D 21.0 22.0 4.0 2.8 2.0 20.4 1.0 2.0 0.6 1 2 3 3.5 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Tempe.
2SC5453 : Ordering number:EN5958 NPN Triple Diffused Planar Silicon Transistor 2SC5453 Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications Features · High speed. · High breakdown voltage (VCBO=1600V). · High reliability (Adoption of HVP process). · Adoption of MBIT process. Package Dimensions unit:mm 2048B [2SC5453] 6.0 20.0 3.3 5.0 26.0 2.0 3.4 20.7 2.0 1.0 0.6 1.2 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Tc=25˚C 5.45 5.45.
2SC5454 : PRELIMINARY DATA SHEET SILICON TRANSISTOR 2SC5454 NPN EPITAXIAL SILICON TRANSISTOR 4-PIN MINI MOLD FEATURE • High gain, low noise • Small reverse transfer capacitance • Can operate at low voltage PACKAGE DIMENSIONS (in mm) 0.4 –0.05 1.5 –0.1 +0.2 2 1 Collector to Emitter Voltage Emitter to Base Voltage Collector Current Total Power Dissipation Junction Temperature Storage Temperature VCEO VEBO IC PT Tj Tstg 6 2 50 200 150 –65 to +150 V 1.1–0.1 0.8 +0.2 5° 5° V mA mW °C °C 5° 0 to 0.1 5° ELECTRICAL CHARACTERISTICS (TA = 25 °C) PARAMETER Collector Cut-off Current Emitter Cut-off Current DC Current Gain Gain Bandwidth Product Reverse Transfer Capacitance Insertion Power Gain No.
2SC5455 : PRELIMINARY DATA SHEET SILICON TRANSISTOR 2SC5455 NPN EPITAXIAL SILICON TRANSISTOR 4-PIN MINI MOLD FEATURE • Ideal for medium-output applications • High gain, low noise • Small reverse transfer capacitance • Can operate at low voltage PACKAGE DIMENSIONS (in mm) 0.4 –0.05 1.5 –0.1 +0.2 2 2.9 ± 0.2 (1.8) 0.85 0.95 3 4 5° 5° 5° ABSOLUTE MAXIMUM RATINGS (TA = 25 °C) PARAMETER Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current Total Power Dissipation Junction Temperature Storage Temperature SYMBOL VCBO VCEO VEBO IC PT Tj Tstg RATING 9 6 2 100 200 150 –65 to +150 UNIT V 1 0.6 –0.05 +0.1 1.1–0.1 0.8 +0.2 V V mA mW °C °C 0 to 0.1 5° ELEC.
2SC5457 : Power Transistors 2SC5457 Silicon NPN triple diffusion planar type For high breakdown voltage high-speed switching 6.5±0.1 5.3±0.1 4.35±0.1 Unit: mm 2.3±0.1 0.5±0.1 7.3±0.1 1.8±0.1 s Features 0.8max 1.0±0.2 1.0±0.1 2.5±0.1 q High-speed switching q High collector to base voltage VCBO q Wide area of safe operation (ASO) 0.93±0.1 0.1±0.05 0.5±0.1 2.3±0.1 4.6±0.1 0.75±0.1 q Satisfactory linearity of foward current transfer ratio hFE / s Absolute Maximum Ratings (TC=25˚C) 1 2 3 1:Base 2:Collector 3:Emitter U Type Package e ) Parameter Symbol Ratings Unit c type Collector to base voltage VCBO 500 V n d tage. ued VCES 500 5.5±0.2 1.8 V s tin Collector to emitter voltag.
2SC5457 : SMD Type Transistors Silicon NPN triple diffusion planar type 2SC5457 TO-252 +0.15 1.50 -0.15 Unit: mm 2.30 +0.8 0.50-0.7 +0.1 -0.1 6.50 +0.2 5.30-0.2 +0.15 -0.15 Features +0.2 9.70 -0.2 +0.15 0.50 -0.15 High collector to base voltage VCBO Wide area of safe operation (ASO) Satisfactory linearity of foward current transfer ratio hFE +0.1 0.80-0.1 0.127 max 2.3 +0.15 4.60-0.15 +0.1 0.60-0.1 +0.28 1.50 -0.1 +0.25 2.65 -0.1 +0.15 5.55 -0.15 1 Base 2 Collector 3 Emitter Absolute Maximum Ratings Ta = 25 Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Base current Collector power dissipation TC = 25 Ta .
2SC5459 : TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC5459 Switching Regulator Applications High-Voltage Switching Applications DC-DC Converter Applications 2SC5459 Unit: mm • High-speed switching: tf = 0.3 μs (max) (IC = 1.2 A) • High collector breakdown voltage: VCEO = 400 V • High DC current gain: hFE = 20 (min) (IC = 0.3 A) Absolute Maximum Ratings (Tc = 25°C) Characteristics Symbol Rating Unit Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current DC Pulse Base current Collector power dissipation Ta = 25°C Tc = 25°C Junction temperature Storage temperature range VCBO VCEO VEBO IC ICP IB PC Tj Tstg 600 400 7 3 5 1 2.0 25 150 −55 to 150.