| Part Number | 2SC5466 |
| Manufacturer | Toshiba Semiconductor |
| Title | NPN TRANSISTOR |
| Description | TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC5466 Dynamic Focus Applications High Voltage Switching Applications High Voltage Amplifier ... |
| Features |
ign the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).
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http://store.iiic.cc/
2006-11-10
Electrical Chara...
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| File Size | 121.05KB |
| Datasheet |
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2SC5460 : TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC5460 Dynamic Focus Applications High-Voltage Switching Applications High-Voltage Amplifier Applications 2SC5460 Unit: mm • High breakdown voltage: VCEO = 800 V Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage VCBO 800 V Collector-emitter voltage VCEO 800 V Emitter-base voltage VEBO 5 V Collector current IC 50 mA Base current IB 25 mA Collector power dissipation Ta = 25°C Tc = 25°C PC 1.5 W 10 Junction temperature Storage temperature range Tj 150 °C Tstg −55 to 150 °C JEDEC JEITA ― ― Note 1: Using continuously under heavy loads (e.g. the application of high tempera.
2SC5461 : 2SC5461 Silicon NPN Triple Diffused Character Display Horizontal Deflection Output Features • High breakdown voltage VCBO = 1500 V • High speed switching tf = 0.15 µsec(typ.) at fH=64kHz • Isolated package TO–3PFM Outline TO–3PFM ADE-208-630 (Z) 1st. Edition Oct. 1, 1998 1 2 3 1. Base 2. Collector 3. Emitter 2SC5461 Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Symbol VCBO Collector to emitter voltage Emitter to base voltage Collector current Collector peak current Collector power dissipation Junction temperature Storage temperature Note: 1. Value at Tc = 25°C VCEO VEBO IC ic(peak) P Note1 C Tj Tstg Ratings 1500 700 6 15 30 50 150 –55 to +150 Unit V V V A A .
2SC5462 : 2SC5462 Silicon NPN Triple Diffused Character Display Horizontal Deflection Output Features • High breakdown voltage VCBO = 1500 V • High speed switching tf = 0.15 µsec(typ.) at fH=64kHz • Isolated package TO–3PFM Outline TO–3PFM ADE-208-671 (Z) 1st. Edition Oct. 1, 1998 1 2 3 1. Base 2. Collector 3. Emitter 2SC5462 Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector peak current Collector power dissipation Junction temperature Storage temperature Note: 1. Value at Tc = 25°C Symbol VCBO VCEO VEBO IC ic(peak) P Note1 C Tj Tstg Ratings 1500 700 6 20 40 50 150 –55 to +150 Unit V V V A A W .
2SC5463 : TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC5463 2SC5463 VHF~UHF Band Low Noise Amplifier Applications Unit: mm • Low noise figure, high gain. • NF = 1.1dB, |S21e|2 = 12dB (f = 1 GHz) Maximum Ratings (Ta = 25°C) Characteristics Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature range Symbol VCBO VCEO VEBO IC IB PC Tj Tstg Rating 20 12 3 60 30 100 125 −55~125 Unit V V V mA mA mW °C °C Microwave Characteristics (Ta = 25°C) JEDEC ― JEITA ― TOSHIBA 2-2E1A Weight: 0.006 g (typ.) Characteristics Transition frequency Insertion gain Noise figure Symbol.
2SC5463 : ·Low Noise Figure NF = 1.1 dB TYP. @VCE = 8 V, IC = 5 mA, f = 1 GHz ·High Gain ︱S21e︱2 = 12 dB TYP. @VCE = 8 V, IC = 15 mA, f = 1 GHz ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in VHF~ UHF band low noise amplifier. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 20 V VCEO Collector-Emitter Voltage 12 V VEBO Emitter-Base Voltage 3 V IC Collector Current-Continuous PC Collector Power Dissipation @TC=25℃ TJ Junction Temperature 60 mA 0.1 W 125 ℃ Tstg Storage Temperature Range -55~125 ℃ isc website：www.iscsemi.cn 1 isc & iscsemi.
2SC5464 : TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC5464 2SC5464 VHF~UHF Band Low Noise Amplifier Applications • Low noise figure, high gain. • NF = 1.1dB, |S21e|2 = 12dB (f = 1 GHz) Absolute Maximum Ratings (Ta = 25°C) Unit: mm Characteristics Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature range Symbol VCBO VCEO VEBO IC IB PC Tj Tstg Rating 20 12 3 60 30 100 125 −55 to 125 Unit V V V mA mA mW °C °C Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause.
2SC5464FT : TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC5464FT 2SC5464FT VHF~UHF Band Low Noise Amplifier Applications Unit: mm • Low noise figure, high gain. • NF = 1.1dB, |S21e|2 = 12dB (f = 1 GHz) Maximum Ratings (Ta = 25°C) Characteristics Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature range Symbol VCBO VCEO VEBO IC IB PC Tj Tstg Rating 20 12 3 60 30 100 125 −55~125 Unit V V V mA mA mW °C °C Microwave Characteristics (Ta = 25°C) JEDEC ― JEITA ― TOSHIBA 2-1B1A Weight: 0.0022 g (typ.) Characteristics Transition frequency Insertion gain Noise figure S.
2SC5465 : 2SC5465 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC5465 Switching Regulator and High Voltage Switching Applications High Speed DC-DC Converter Applications Industrial Applications Unit: mm • Excellent switching times: tr = 0.7 µs (max) tf = 0.5 µs (max) (IC = 0.08 A) • High collector breakdown voltage: VCEO = 800 V Maximum Ratings (Ta = 25°C) Characteristics Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current DC Pulse Base current Collector power dissipation Ta = 25°C Tc = 25°C Junction temperature Storage temperature range Symbol VCBO VCEO VEBO IC ICP IB PC Tj Tstg Rating 900 800 7 0.8 1.5 0.2 1.0 20 150 −55 to 150 Unit V V .
2SC5468 : .
2SC5469 : 2SC5469 Silicon NPN Triple Diffused Character Display Horizntal Deflection Output Features • High breakdown voltage VCBO = 1500 V • High speed switching tf = 0.15 µsec (typ.) at fH = 64kHz Outline 3rd. Edition December 1997 Target Specification Downloaded from Elcodis.com electronic components distributor 2SC5469 Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector peak current Collector power dissipation Junction temperature Storage temperature Note: 1. Value at Tc = 25°C Symbol VCBO VCEO VEBO IC ic(peak) P Note1 C Tj Tstg Ratings 1500 700 6 15 30 125 150 –55 to +150 Unit V V V A A W °C .