Part Number | 2SD1271A |
Manufacturer | Panasonic Semiconductor |
Title | Silicon NPN Transistor |
Description | Power Transistors 2SD1271, 2SD1271A Silicon NPN epitaxial planar type For power switching Complementary to 2SB946 and 2SB946A Unit: mm 0.7±0.1 10... |
Features |
q q q q
Low collector to emitter saturation voltage VCE(sat) Satisfactory linearity of foward current transfer ratio hFE Large collector current IC Full-pack package which can be installed to the heat sink with one screw (TC=25˚C)
s Absolute Maximum Ratings
Parameter Collector to base voltage Coll...
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File Size | 59.22KB |
Datasheet |
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2SD1271 : Power Transistors 2SD1271, 2SD1271A Silicon NPN epitaxial planar type For power switching Complementary to 2SB946 and 2SB946A Unit: mm 0.7±0.1 10.0±0.2 5.5±0.2 2.7±0.2 4.2±0.2 φ3.1±0.1 1.4±0.1 1.3±0.2 0.8±0.1 0.5 +0.2 –0.1 2.54±0.25 5.08±0.5 1 2 3 4.2±0.2 s Features q q q q Low collector to emitter saturation voltage VCE(sat) Satisfactory linearity of foward current transfer ratio hFE Large collector current IC Full-pack package which can be installed to the heat sink with one screw (TC=25˚C) s Absolute Maximum Ratings Parameter Collector to base voltage Collector to 2SD1271 2SD1271A 2SD1271 Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg 16.7±0.3 14.0±0.5 Ratings 130 150 80 100 7 15 7 40 2 15.
2SD1271 : ·Low Collector Saturation Voltage : VCE(sat)= 0.5V(Max)@ IC= 5A ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 80V (Min) ·Good Linearity of hFE ·Complement to Type 2SB946 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for power switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 130 V VCEO Collector-Emitter Voltage 80 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 7 A ICM Collector Current-Peak Collector Power Dissipation @ TC=25℃ PC Collector Power Dissipation @ Ta=25℃ TJ Junction Temperature 15 A 40 W 2 150 ℃ Tstg Stor.
2SD1271 : ·With TO-220Fa package ·Complement to type 2SB946/946A ·Low collector saturation voltage ·Good linearity of hFE ·Large collector current IC APPLICATIONS ·For power switching applications PINNING PIN 1 2 3 DESCRIPTION Base Collector Fig.1 simplified outline (TO-220Fa) and symbol Emitter ABSOLUTE MAXIMUM RATINGS AT Ta=25 SYMBOL VCBO PARAMETER Collector-base voltage 2SD1271 2SD1271A VCEO VEBO IC ICM PC Tj Tstg Collector-emitter voltage Emitter-base voltage Collector current (DC) Collector current-peak TC=25 Collector power dissipation Ta=25 Junction temperature Storage temperature 2 150 -55~150 2SD1271 2SD1271A Open collector Open base 100 7 7 15 40 w V A A CONDITIONS Open emitter 150 80 V VAL.
2SD1271A : ·Low Collector Saturation Voltage : VCE(sat)= 0.5V(Max)@ IC= 5A ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 100V (Min) ·Good Linearity of hFE ·Complement to Type 2SB946A ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for power amplification. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 150 V VCEO Collector-Emitter Voltage 100 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 7 A ICM Collector Current-Peak Collector Power Dissipation @ TC=25℃ PC Collector Power Dissipation @ Ta=25℃ TJ Junction Temperature 15 A 40 W 2 150 ℃ Tstg Storage Te.
2SD1271A : ·With TO-220Fa package ·Complement to type 2SB946/946A ·Low collector saturation voltage ·Good linearity of hFE ·Large collector current IC APPLICATIONS ·For power switching applications PINNING PIN 1 2 3 DESCRIPTION Base Collector Fig.1 simplified outline (TO-220Fa) and symbol Emitter ABSOLUTE MAXIMUM RATINGS AT Ta=25 SYMBOL VCBO PARAMETER Collector-base voltage 2SD1271 2SD1271A VCEO VEBO IC ICM PC Tj Tstg Collector-emitter voltage Emitter-base voltage Collector current (DC) Collector current-peak TC=25 Collector power dissipation Ta=25 Junction temperature Storage temperature 2 150 -55~150 2SD1271 2SD1271A Open collector Open base 100 7 7 15 40 w V A A CONDITIONS Open emitter 150 80 V VAL.
2SD1271A : Elektronische Bauelemente 2SD1271A 7A , 150V NPN Plastic-Encapsulated Transistor RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free FEATURES Power switching applications Low Collector to Emitter Saturation Voltage VCE(sat) Satisfactory Linearity of Forward Current Transfer Ratio hFE Large Collector Current CLASSIFICATION OF hFE Product-Rank 2SD1271A-R Range 60~120 2SD1271A-Q 90~180 2SD1271A-P 130~260 ITO-220J BN D E MA H JC K LL G F REF. A B C D E F G Millimeter Min. Max. 14.80 15.60 9.50 10.50 13.00 REF. 4.30 4.70 2.50 3.20 2.40 2.90 0.30 0.75 REF. H J K L M N Millimeter Min. Max. 3.00 4.00 0.90 1.50 0.50 0.90 2.34 2.74 2.50 2.90 φ 3.5 REF. ABSOLUTE MAXI.