2SD1286-Z

2SD1286-Z : ·With TO-252(DPAK) packaging ·Very high DC current gain ·Monolithic darlington transistor with integrated antiparallel collector-emitter diode ·Complement to type 2SB963-Z ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·AC-DC motor control ·Electronic ignition ·Alternator regulator ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO VCEO VEBO IC ICM PT Tj Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current-Continuous Collector Current-Peak Total Power Dissipation Max.Junction Temperature 60 V 60 V 8 V 1 A 2 A 2.0 W 150 ℃ Tstg Storage Temperature Range THERMAL CHARACTER.

2SD1286-Z : of circuits, software and other related information in this document are provided only to illustrate the operation of semiconductor products and application examples. You are fully responsible for the incorporation of these circuits, software, and information in the design of your equipment. Renesas Electronics assumes no responsibility for any losses incurred by you or third parties arising from the use of these circuits, software, or information. When exporting the products or technology described in this document, you should comply with the applicable export control laws and regulations and follow the procedures required by such laws and regulations. You should not use Renesas Electronic.