2SD1826

2SD1820 : Transistor 2SD1820, 2SD1820A Silicon NPN epitaxial planer type For general amplification Complementary to 2SB1219 and 2SB1219A Unit: mm s Features q q 2.0±0.2 1.3±0.1 2.1±0.1 0.425 1.25±0.1 0.425 0.65 Low collector to emitter saturation voltage VCE(sat). S-Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing. (Ta=25˚C) Ratings 30 60 25 50 5 1 500 150 150 –55 ~ +150 Unit 0.65 1 3 s Absolute Maximum Ratings Parameter Collector to base voltage Collector to 2SD1820 2SD1820A 2SD1820 VCEO VEBO ICP IC PC Tj Tstg VCBO Symbol 2 0.2 0.9±0.1 0.7±0.1 V emitter voltage 2SD1820A Emitter to base voltage Peak collect.

2SD1820 : Transistor 2SD1820, 2SD1820A Silicon NPN epitaxial planer type For general amplification Complementary to 2SB1219 and 2SB1219A Unit: mm s Features q q 2.0±0.2 1.3±0.1 2.1±0.1 0.425 1.25±0.1 0.425 0.65 Low collector to emitter saturation voltage VCE(sat). S-Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing. (Ta=25˚C) Ratings 30 60 25 50 5 1 500 150 150 –55 ~ +150 Unit 0.65 1 3 s Absolute Maximum Ratings Parameter Collector to base voltage Collector to 2SD1820 2SD1820A 2SD1820 VCEO VEBO ICP IC PC Tj Tstg VCBO Symbol 2 0.2 0.9±0.1 0.7±0.1 V emitter voltage 2SD1820A Emitter to base voltage Peak collect.

2SD1820A : Transistors 2SD1820A Silicon NPN epitaxial planer type Unit: mm For general amplification Complementary to 2SB1219A I Features • Low collector to emitter saturation voltage VCE(sat) • S-mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing. (0.425) 0.3+0.1 –0.0 3 0.15+0.10 –0.05 1.25±0.10 2.1±0.1 5° 1 2 0.2±0.1 0 to 0.1 0.9±0.1 0.9+0.2 –0.1 (0.65) (0.65) 1.3±0.1 2.0±0.2 10° I Absolute Maximum Ratings Ta = 25°C Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature .

2SD1820A : Transistors 2SD1820A Silicon NPN epitaxial planer type Unit: mm For general amplification Complementary to 2SB1219A I Features • Low collector to emitter saturation voltage VCE(sat) • S-mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing. (0.425) 0.3+0.1 –0.0 3 0.15+0.10 –0.05 1.25±0.10 2.1±0.1 5° 1 2 0.2±0.1 0 to 0.1 0.9±0.1 0.9+0.2 –0.1 (0.65) (0.65) 1.3±0.1 2.0±0.2 10° I Absolute Maximum Ratings Ta = 25°C Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature .

2SD1820A : Transistors 2SD1820A Silicon NPN epitaxial planer type Unit: mm For general amplification Complementary to 2SB1219A I Features • Low collector to emitter saturation voltage VCE(sat) • S-mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing. (0.425) 0.3+0.1 –0.0 3 0.15+0.10 –0.05 1.25±0.10 2.1±0.1 5° 1 2 0.2±0.1 0 to 0.1 0.9±0.1 0.9+0.2 –0.1 (0.65) (0.65) 1.3±0.1 2.0±0.2 10° I Absolute Maximum Ratings Ta = 25°C Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature .

2SD1821 : Transistor 2SD1821, 2SD1821A Silicon NPN epitaxial planer type For high breakdown voltage low-frequency and low-noise amplification Unit: mm s Features q q q 2.1±0.1 0.425 1.25±0.1 0.425 High collector to emitter voltage VCEO. Low noise voltage NV. S-Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing. (Ta=25˚C) Ratings 150 185 150 185 5 100 50 150 150 –55 ~ +150 Unit 0.65 1 2.0±0.2 1.3±0.1 0.65 3 2 s Absolute Maximum Ratings Parameter Collector to base voltage Collector to 2SD1821 2SD1821A 2SD1821 Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg 0.2 0.9±0.1 V 0.7±0.1 0 to 0.1 0.2±0.1 emitter voltage 2SD1.

2SD1821A : Transistor 2SD1821, 2SD1821A Silicon NPN epitaxial planer type For high breakdown voltage low-frequency and low-noise amplification Unit: mm s Features q q q 2.1±0.1 0.425 1.25±0.1 0.425 High collector to emitter voltage VCEO. Low noise voltage NV. S-Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing. (Ta=25˚C) Ratings 150 185 150 185 5 100 50 150 150 –55 ~ +150 Unit 0.65 1 2.0±0.2 1.3±0.1 0.65 3 2 s Absolute Maximum Ratings Parameter Collector to base voltage Collector to 2SD1821 2SD1821A 2SD1821 Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg 0.2 0.9±0.1 V 0.7±0.1 0 to 0.1 0.2±0.1 emitter voltage 2SD1.

2SD1823 : Transistor 2SD1823 Silicon NPN epitaxial planer type For low-frequency amplification Unit: mm s Features q q q q q 2.1±0.1 0.425 1.25±0.1 0.425 High foward current transfer ratio hFE. Low collector to emitter saturation voltage VCE(sat). High emitter to base voltage VEBO. Low noise voltage NV. S-Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing. 0.65 1 2.0±0.2 1.3±0.1 0.65 3 2 0.2 (Ta=25˚C) Ratings 50 40 15 100 50 150 150 –55 ~ +150 Unit V V V mA mA mW ˚C ˚C 0.7±0.1 s Absolute Maximum Ratings Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector cur.

2SD1824 : Transistor 2SD1824 Silicon NPN epitaxial planer type For low-frequency amplification Unit: mm 2.1±0.1 s q q q q Features High foward current transfer ratio hFE. Low collector to emitter saturation voltage VCE(sat). High emitter to base voltage VEBO. S-Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing. 0.65 2.0±0.2 1.3±0.1 0.425 1.25±0.1 0.425 1 0.65 3 2 0.2 (Ta=25˚C) Ratings 100 100 15 50 20 150 150 –55 ~ +150 Unit V V V mA mA mW ˚C ˚C 0.7±0.1 s Absolute Maximum Ratings Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current .

2SD1825 : Ordering number:EN2209C PNP/NPN Epitaxial Planar Silicon Darlington Transistors 2SB1223/2SD1825 Driver Applications Applications · Suitable for use in control of motor drivers, printer hammer drivers, and constant-voltage regulators. Features · High DC current gain. · Large current capacity and wide ASO. · Micaless package facilitating mounting. Package Dimensions unit:mm 2041A [2SB1223/2SD1825] ( ) : 2SB1223 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Symbol VCBO VCEO VEBO IC ICP PC Junction Temperature Storage Temperatu.

2SD1825 : ·With TO-220F package www.datasheet4u.com ·Complement to type 2SB1223 ·High DC current gain. ·Large current capacity and wide ASO. ·DARLINGTON APPLICATIONS ·For use in control of motor drivers, printer hammer drivers, and constant-voltage regulators. PINNING PIN 1 2 3 Base Collector Emitter DESCRIPTION 2SD1825 Fig.1 simplified outline (TO-220F) and symbol Absolute maximum ratings (Ta=25 ) SYMBOL VCBO VCEO VEBO IC ICM PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak TC=25 PC Collector dissipation Ta=25 Tj Tstg Junction temperature Storage temperature 2 150 -55~150 CONDITIONS Open emitter Open base Open collector VALUE .

2SD1825 : ·High DC Current Gain- : hFE= 2000(Min)@ (VCE= 2V, IC= 2A) ·Large Current Capability and Wide ASO. ·Complement to Type 2SB1223 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in control of motor drivers, printer hammer drivers, and constant-voltage regulators. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 70 V VCEO Collector-Emitter Voltage 60 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous 4 A ICM Collector Current-Peak Collector Power Dissipation @Ta=25℃ PC Collector Power Dissipation @TC=25℃ TJ Junction Temperature 6 A 2 W 20 150 ℃ T.

2SD1826 : ·High DC Current Gain- : hFE= 2000(Min)@ (VCE= 2V, IC= 3.5A) ·Large Current Capability and Wide ASO. ·Complement to Type 2SB1224 APPLICATIONS ·Designed for use in control of motor drivers, printer hammer drivers, relay drivers,and constant-voltage regulators. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 70 V VCEO Collector-Emitter Voltage 60 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous 7 A ICM Collector Current-Peak Collector Power Dissipation @Ta=25℃ PC Collector Power Dissipation @TC=25℃ TJ Junction Temperature 10 A 2 W 25 150 ℃ Tstg Storage Temperature -55~150 ℃ isc website：www.iscsemi.com .

2SD1827 : ·With TO-220F package www.datasheet4u.com ·Complement to type 2SB1225 ·High DC current gain. ·Large current capacity and wide ASO. ·Low saturation voltage. ·DARLINGTON APPLICATIONS ·Suitable for use in cotrol of motor drivers, printer hammer drivers, relay drivers, and constant-voltage regulators. PINNING PIN 1 2 3 Base Collector Emitter DESCRIPTION 2SD1827 Fig.1 simplified outline (TO-220F) and symbol Absolute maximum ratings (Ta=25 ) SYMBOL VCBO VCEO VEBO IC ICM PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak TC=25 PC Collector dissipation 2 Tj Tstg Junction temperature Storage temperature 150 -55~150 CONDITIONS Op.

2SD1827 : ·High DC Current Gain- : hFE= 2000(Min)@ (VCE= 2V, IC= 5A) ·Large Current Capability and Wide ASO. ·Complement to Type 2SB1225 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in control of motor drivers, printer hammer drivers, relay drivers,and constant-voltage regulators. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 70 V VCEO Collector-Emitter Voltage 60 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous 10 A ICM Collector Current-Peak Collector Power Dissipation @Ta=25℃ PC Collector Power Dissipation @TC=25℃ TJ Junction Temperature 15 A .

2SD1828 : ·High DC Current Gain- : hFE= 1500(Min)@ (VCE= 3V, IC= 1.5A) ·Large Current Capability and Wide ASO. ·Complement to Type 2SB1226 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in motor drivers, printer hammer drivers, relay drivers,and constant-voltage regulators. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 110 V VCEO Collector-Emitter Voltage 100 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous 3 A ICM Collector Current-Peak Collector Power Dissipation @Ta=25℃ PC Collector Power Dissipation @TC=25℃ TJ Junction Temperature Tstg Storage T.