2SD2179

2SD217 : www.DataSheet4U.com .

2SD2170 : 2SD2170 Transistors Medium Power Transistor 20 (Motor, Relay drive) (90 + −10 , 2A) 2SD2170 !Features 1) Built-in zener diode between collector and base. 2) Zener diode has low dispersion. 3) Strong protection against reverse power surges due to "L" loads. 4) Darlington connection for high DC current gain. 5) Built-in resistor between base and emitter. 6) Built-in damper diode. !External dimensions (Units : mm) 4.0 1.0 2.5 0.5 1.5 0.4 (1) 3.0 0.5 (3) 4.5 1.6 (2) (1) Base(Gate) (2) Collector(Drain) (3) Emitter(Source) 1.5 0.4 ROHM : MPT3 EIAJ : SC-62 !Absolute maximum ratings (Ta=25°C) Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector curre.

2SD2171S : www.DataSheet4U.com www.DataSheet4U.com .

2SD2176 : Ordering number : EN3196A 2SD2176 SANYO Semiconductors DATA SHEET 2SD2176 NPN Epitaxial Planar Silicon Transistor Motor Driver Applications Features • Darlington connection. • On-chip Zener diode of 60±10V between collector and base. • High inductive load handling capability. • Small-sized package. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Base Current Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP IB PC Tj Tstg Conditions On-chip Zener diode (60±10V) On-chip Zener diode (60±10V) Mounted on a ceramic .

2SD2177 : Transistors 2SD2177 Silicon NPN epitaxial planer type Unit: mm For low-frequency output amplification Complementary to 2SB1434 I Features • Low collector to emitter saturation voltage VCE(sat) • Ccomplementary pair with 2SB1434 • Allowing supply with the radial taping 6.9±0.1 1.05 2.5±0.1 ±0.05 (1.45) 0.8 0.15 0.7 4.0 0.65 max. 1.0 1.0 0.2 0.45−0.05 +0.1 Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation * Junction temperature Storage temperature Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg Rating 50 50 5 3 2 1 150 −55 to +150 Unit V V V A A W °C °C 1.2±0.1 0.65 max. 0.1 0.4.

2SD2177A : Transistor 2SD2177A Silicon NPN epitaxial planer type For low-frequency output amplification Unit: mm 6.9±0.1 0.15 1.05 2.5±0.1 ±0.05 (1.45) 0.8 0.5 4.5±0.1 0.7 4.0 s Features q q Low collector to emitter saturation voltage VCE(sat). Allowing supply with the radial taping. 0.65 max. 1.0 1.0 0.2 s Absolute Maximum Ratings Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Peak collector current Collector power dissipation Junction temperature Storage temperature *1 (Ta=25˚C) Ratings 60 60 5 2 3 1 150 –55 ~ +150 1cm2 Unit 0.45–0.05 0.45–0.05 +0.1 +0.1 Symbol VCBO VCEO VEBO IC ICP PC*1 Tj Tstg 2.5±0.5 1 2 2.5±0.5 3 V V A A.

2SD2178 : www.DataSheet4U.com Power Transistors 2SD2178 Silicon NPN epitaxial planar type For low-frequency output amplification 7.5±0.2 Unit: mm 4.5±0.2 16.0±1.0 ■ Absolute Maximum Ratings Ta = 25°C Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Emitter-base voltage (Collector open) Collector current Peak collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Rating 50 50 5 2 3 1.5 150 −55 to +150 Unit V V V A A W °C °C 2.5±0.1 • Low collector-emitter saturation voltage VCE(sat) • Large collector current IC 10.8±0.2 0.65±0.1 0.85±0.1 1.0±0.1 0.8 C 90˚ ■ Features 3.8±0.2 0.8 C 0.

2SD2179 : Transistor 2SD2179 Silicon NPN epitaxial planer type For low-frequency output amplification Complementary to 2SB1446 6.9±0.1 0.15 Unit: mm 1.05 2.5±0.1 ±0.05 (1.45) 0.8 0.5 4.5±0.1 0.45–0.05 2.5±0.1 0.7 4.0 s Features q q q 0.65 max. 1.0 1.0 Low collector to emitter saturation voltage VCE(sat). Complementary pair with 2SB1446. Allowing supply with the radial taping. 0.2 Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature *1 Symbol VCBO VCEO VEBO ICP IC PC* Tj Tstg Ratings 50 50 5 7 5 1 150 –55 ~ +150 1cm2 Unit V V V A A W ˚C ˚C 1 2 .