| Part Number | SMBTA56M |
| Manufacturer | Infineon Technologies AG |
| Title | PNP Silicon AF Transistor |
| Description | SMBTA56M PNP Silicon AF Transistor High breakdown voltage Low collector-emitter saturation voltage Complementary type: SMBTA06M (NPN) 4 5 3... |
| Features |
µA, IE = 0 Emitter-base breakdown voltage IE = 10 µA, IC = 0 Collector cutoff current VCB = 80 V, IE = 0 Collector cutoff current VCB = 80 V, IE = 0 , TA = 150 °C ICBO ICEO hFE ICBO V(BR)EBO V(BR)CBO V(BR)CEO typ. max.
Unit
80 80 4 -
-
100 20 100
V
nA µA nA -
Collector cutoff current
VCE = 60...
|
| File Size | 45.72KB |
| Datasheet |
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SMBTA56 : PNP Silicon AF Transistors SMBTA 55 SMBTA 56 High breakdown voltage q Low collector-emitter saturation voltage q Complementary types: SMBTA 05, SMBTA 06 (NPN) q Type SMBTA 55 SMBTA 56 Marking s2H s2G Ordering Code (tape and reel) Q68000-A3386 Q68000-A2882 Pin Configuration 1 2 3 B E C Package1) SOT-23 Maximum Ratings Parameter Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Peak collector current Base current Peak base current Total power dissipation, TS = 79 ˚C Junction temperature Storage temperature range Thermal Resistance Junction - ambient2) Junction - soldering point Rth JA Rth JS ≤ ≤ Symbol SMBTA 55 VCE0 VCB0 VEB0 IC ICM IB IBM Ptot Tj.
SMBTA56M : SMBTA 56M PNP Silicon AF Transistor • High breakdown voltage • Low collector-emitter saturation voltage • Complementary type: SMBTA 06M (NPN) 4 5 3 2 1 VPW05980 Type SMBTA 56M Marking Ordering Code Pin Configuration s2G Q62702-A3474 Package 1 = B 2 = C 3 = E 4 n.c. 5 = C SCT-595 Maximum Ratings Parameter Collector-emitter voltage Collector-base voltage Emitter-base voltage DC collector current Peak collector current Base current Peak base current Total power dissipation, T S ≤ 95 °C Junction temperature Storage temperature Symbol Value 80 80 4 500 1 100 200 1 150 - 65...+150 W °C mA A mA Unit V VCEO VCBO VEBO IC I CM IB I BM Ptot Tj T stg Thermal Resistance Junction ambient 1) Juncti.