Part Number | IRFB9N30A |
Manufacturer | International Rectifier |
Title | Power MOSFET |
Description | Third Generation HEXFETs from International Rectifier provide the designer with the best combination of fast switching, ruggedized device design, ... |
Features |
nt Repetitive Avalanche Energy Peak Diode Recovery dv/dt Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Mounting torque, 6-32 or M3 srew
Max.
9.3 5.9 37 96 0.77 ± 30 160 9.3 9.6 4.6 -55 to + 150 300 (1.6mm...
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Published | Apr 16, 2005 |
Datasheet | IRFB9N30A PDF File |